Philips IRF730 Datasheet

Philips Semiconductors Product specification

PowerMOS transistor		IRF730
Avalanche energy rated
FEATURES	SYMBOL	QUICK REFERENCE DATA

•Repetitive Avalanche Rated

•Fast switching

•High thermal cycling performance

•Low thermal resistance

d

VDSS = 400 V

ID = 7.2 A

g

RDS(ON) ≤ 1 Ω

s

GENERAL DESCRIPTION		PINNING						SOT78 (TO220AB)
N-channel, enhancement mode			PIN			DESCRIPTION			tab
field-effect power transistor,
intended for use in off-line switched		1				gate
mode power supplies, T.V. and
computer monitor power supplies,		2				drain
d.c. to d.c. converters, motor control
circuits	and general purpose	3				source
switching applications.			tab			drain
The IRF730 is supplied in the									1 2 3
SOT78	(TO220AB) conventional
leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS	Drain-source voltage	Tj = 25 ˚C to 150˚C	-	400	V
VDGR	Drain-gate voltage	Tj = 25 ˚C to 150˚C; RGS = 20 kΩ	-	400	V
VGS	Gate-source voltage	Tmb = 25 ˚C; VGS = 10 V	-	± 30	V
ID	Continuous drain current		-	7.2	A
IDM		Tmb = 100 ˚C; VGS = 10 V	-	4.6	A
	Pulsed drain current	Tmb = 25 ˚C	-	29	A
PD	Total dissipation	Tmb = 25 ˚C	-	125	W
Tj, Tstg	Operating junction and		- 55	150	˚C
	storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

EAS	Non-repetitive avalanche	Unclamped inductive load, IAS = 4.8 A;
	energy	tp = 0.23 ms; Tj prior to avalanche = 25˚C;
		VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
	Repetitive avalanche energy1	to fig:17		= 2.5 μs; T
E		I = 7.2 A; t			prior to
AR		AR	p	j
		avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
IAS, IAR	Repetitive and non-repetitive	refer to fig:18
	avalanche current

-	290	mJ
-	9.4	mJ
-	7.2	A

1 pulse width and repetition rate limited by Tj max.

March 1999

1

Rev 1.000

Philips Semiconductors Product specification

PowerMOS transistor					IRF730
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction		-	-	1	K/W
	to mounting base
Rth j-a	Thermal resistance junction	in free air	-	60	-	K/W
	to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA	400	-	-	V
	voltage
V(BR)DSS /	Drain-source breakdown	VDS = VGS; ID = 0.25 mA	-	0.1	-	%/K
Tj	voltage temperature
	coefficient					Ω
RDS(ON)	Drain-source on resistance	VGS = 10 V; ID = 3.6 A	-	0.7	1
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 0.25 mA	2.0	3.0	4.0	V
gfs	Forward transconductance	VDS = 30 V; ID = 3.6 A	2	4	-	S
IDSS	Drain-source leakage current	VDS = 400 V; VGS = 0 V	-	1	25	μA
		VDS = 320 V; VGS = 0 V; Tj = 125 ˚C	-	30	250	μA
IGSS	Gate-source leakage current	VGS = ±30 V; VDS = 0 V	-	10	200	nA
Qg(tot)	Total gate charge	ID = 7.2 A; VDD = 320 V; VGS = 10 V	-	52	62	nC
Qgs	Gate-source charge		-	3	5	nC
Qgd	Gate-drain (Miller) charge		-	26	30	nC
td(on)	Turn-on delay time	VDD = 200 V; RD = 27 Ω;	-	12	-	ns
tr	Turn-on rise time	RG = 12 Ω	-	33	-	ns
td(off)	Turn-off delay time		-	93	-	ns
tf	Turn-off fall time		-	42	-	ns
Ld	Internal drain inductance	Measured from tab to centre of die	-	3.5	-	nH
Ld	Internal drain inductance	Measured from drain lead to centre of die	-	4.5	-	nH
Ls	Internal source inductance	Measured from source lead to source	-	7.5	-	nH
		bond pad
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz	-	620	-	pF
Coss	Output capacitance		-	108	-	pF
Crss	Feedback capacitance		-	63	-	pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IS	Continuous source current	Tmb = 25˚C	-	-	7.2	A
	(body diode)
ISM	Pulsed source current (body	Tmb = 25˚C	-	-	29	A
	diode)
VSD	Diode forward voltage	IS = 7.2 A; VGS = 0 V	-	-	1.2	V
trr	Reverse recovery time	IS = 7.2 A; VGS = 0 V; dI/dt = 100 A/μs	-	270	-	ns
Qrr	Reverse recovery charge		-	3.3	-	μC

March 1999

2

Rev 1.000

Philips Semiconductors	Product specification
PowerMOS transistor	IRF730
Avalanche energy rated

120	PD%				Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140
					Tmb /	C
	Fig.1. Normalised power dissipation.
		PD% = 100×PD/PD 25 ˚C = f(Tmb)

120	ID%				Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140
					Tmb /	C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS ³ 10 V

100	ID, Drain current (Amps)			PHP3N50
		VDS/ID
		=	tp = 10 us
10	RDS(ON)
			100 us
1			1 ms
		DC	10 ms
0.1		100	1000	10000
10
		VDS, Drain-source voltage (Volts)

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

1	Zth j-mb, Transient thermal impedance (K/W)					PHP3N60
	D = 0.5
	0.2
	0.1
0.1	0.05
	0.02
0.01	single pulse			P	tp	tp
				D		D = T
					T	t
0.001		10us	100us	1ms	10ms	100ms	1s
1us
			tp, pulse width (s)

		Fig.4. Transient thermal impedance.
		Zth j-mb = f(t); parameter D = tp/T
20	ID, Drain current (Amps)					PHP5N40
	Tj = 25 C					10 V
							7 V
15							6.5 V
							6 V
10							5.5 V
							5 V
5						VGS = 4.5 V
0	0	5	10	15	20	25	30
			VDS, Drain-Source voltage (Volts)

Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS

2.5	RDS(on), Drain-Source on resistance (Ohms)				PHP5N40
	4.5 V	5 V	5.5 V	VGS = 6 V	Tj = 25 C
2				6.5 V
				7 V	10 V
1.5
1
0.5
0		5	10	15	20
0
			ID, Drain current (Amps)

Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS

March 1999

3

Rev 1.000