Philips Semiconductors |
Product specification |
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N-channel TrenchMOS™ transistor |
IRF640, IRF640S |
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FEATURES |
SYMBOL |
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QUICK REFERENCE DATA |
• 'Trench' technology |
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d |
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VDSS = 200 V |
• Low on-state resistance |
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• Fast switching |
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ID = 16 A |
• Low thermal resistance |
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g |
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RDS(ON) ≤ 180 mΩ |
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s |
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GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING |
SOT78 (TO220AB) |
SOT404 (D2PAK) |
PIN DESCRIPTION
tab
1gate
2drain1
3source tab drain
1 2 3
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tab |
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2 |
1 |
3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDSS |
Drain-source voltage |
Tj = 25 ˚C to 175˚C |
- |
200 |
V |
VDGR |
Drain-gate voltage |
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ |
- |
200 |
V |
VGS |
Gate-source voltage |
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- |
± 20 |
V |
ID |
Continuous drain current |
Tmb = 25 ˚C; VGS = 10 V |
- |
16 |
A |
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Tmb = 100 ˚C; VGS = 10 V |
- |
11 |
A |
IDM |
Pulsed drain current |
Tmb = 25 ˚C |
- |
64 |
A |
PD |
Total power dissipation |
Tmb = 25 ˚C |
- |
136 |
W |
Tj, Tstg |
Operating junction and |
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- 55 |
175 |
˚C |
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storage temperature |
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1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
N-channel TrenchMOS™ transistor |
IRF640, IRF640S |
|
|
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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EAS |
Non-repetitive avalanche |
Unclamped inductive load, IAS = 6.2 A; |
- |
580 |
mJ |
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energy |
tp = 720 μs; Tj prior to avalanche = 25˚C; |
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VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer |
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IAS |
Peak non-repetitive |
to fig;14 |
- |
16 |
A |
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avalanche current |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction |
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- |
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1.1 |
K/W |
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to mounting base |
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Rth j-a |
Thermal resistance junction |
SOT78 package, in free air |
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60 |
- |
K/W |
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to ambient |
SOT404 package, pcb mounted, minimum |
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50 |
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K/W |
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footprint |
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ELECTRICAL CHARACTERISTICS
Tj= 25˚C |
unless otherwise specified |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
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Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA; |
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200 |
- |
- |
V |
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voltage |
Tj = -55˚C |
178 |
- |
- |
V |
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VGS(TO) |
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Gate threshold voltage |
VDS = VGS; ID = 1 mA |
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2 |
3 |
4 |
V |
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Tj |
= 175˚C |
1 |
- |
- |
V |
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Tj = -55˚C |
- |
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6 |
V |
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RDS(ON) |
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Drain-source on-state |
VGS = 10 V; ID = 8 A |
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- |
130 |
180 |
mΩ |
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resistance |
Tj |
= 175˚C |
- |
- |
522 |
mΩ |
IGSS |
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Gate source leakage current |
VGS = ± 20 V; VDS = 0 V |
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10 |
100 |
nA |
IDSS |
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Zero gate voltage drain |
VDS = 200 V; VGS = 0 V; |
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- |
0.05 |
10 |
μA |
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current |
VDS = 160 V; VGS = 0 V; Tj = 175˚C |
- |
- |
250 |
μA |
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Qg(tot) |
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Total gate charge |
ID = 18 A; VDD = 160 V; VGS = 10 V |
- |
- |
63 |
nC |
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Qgs |
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Gate-source charge |
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- |
- |
12 |
nC |
Qgd |
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Gate-drain (Miller) charge |
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- |
- |
35 |
nC |
td on |
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Turn-on delay time |
VDD = 100 V; RD = 5.6 Ω; |
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12 |
- |
ns |
tr |
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Turn-on rise time |
VGS = 10 V; RG = 5.6 Ω |
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45 |
- |
ns |
td off |
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Turn-off delay time |
Resistive load |
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54 |
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ns |
tf |
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Turn-off fall time |
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38 |
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ns |
Ld |
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Internal drain inductance |
Measured tab to centre of die |
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3.5 |
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nH |
Ld |
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Internal drain inductance |
Measured from drain lead to centre of die |
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4.5 |
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nH |
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(SOT78 package only) |
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Ls |
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Internal source inductance |
Measured from source lead to source |
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7.5 |
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nH |
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bond pad |
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Ciss |
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Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
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1850 |
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pF |
Coss |
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Output capacitance |
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170 |
- |
pF |
Crss |
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Feedback capacitance |
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91 |
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pF |
August 1999 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
N-channel TrenchMOS™ transistor |
IRF640, IRF640S |
|
|
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IS |
Continuous source current |
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- |
- |
16 |
A |
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(body diode) |
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ISM |
Pulsed source current (body |
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- |
- |
64 |
A |
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diode) |
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VSD |
Diode forward voltage |
IF = 18 |
A; VGS = 0 V |
- |
1.0 |
1.5 |
V |
trr |
Reverse recovery time |
IF = 18 |
A; -dIF/dt = 100 A/μs; |
- |
130 |
- |
ns |
Qrr |
Reverse recovery charge |
VGS = 0 V; VR = 25 V |
- |
0.8 |
- |
μC |
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August 1999 |
3 |
Rev 1.100 |
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