Philips irf640n DATASHEETS
PD - 94006
IRF640N
IRF640NS
IRF640NL
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
G
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile application.
Absolute Maximum Ratings
TO-220AB
IRF640N
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 8.1 V/ns
T
J
T
STG
Pulsed Drain Current 72
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 247 mJ
Avalanche Current 18 A
Repetitive Avalanche Energy 15 mJ
Operating Junction and -55 to +175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
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HEXFET® Power MOSFET
D
V
R
DS(on)
DSS
= 200V
= 0.15Ω
ID = 18A
S
D2Pak
IRF640NS
TO-262
IRF640NL
°C
10/09/00
IRF640N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 200 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.25 –– – V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.15 Ω VGS = 10V, ID = 11A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.8 ––– ––– S VDS = 50V, ID = 11A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 67 ID = 11A
Gate-to-Source Charge ––– ––– 11 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 10 ––– VDD = 100V
Rise Time ––– 19 ––– ID = 11A
Turn-Off Delay Time ––– 23 ––– RG = 2.5Ω
ns
Fall Time ––– 5.5 ––– RD = 9.0Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1160 ––– VGS = 0V
Output Capacitance ––– 185 ––– VDS = 25V
Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
18
72
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 167 251 ns TJ = 25°C, IF = 11A
Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
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D
S
IRF640N/S/L
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
4.5V
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
2.5
2.0
I =
D
18A
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120140 160 180
T , Junction Temperature( C)
J
V =
Fig 4. Normalized On-Resistance
GS
°
10V
Vs. Temperature
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IRF640N/S/L
2500
2000
1500
1000
C, Capacitance(pF)
500
0
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
ds
gd
iss
C
rss
C
oss
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
20
I =
11A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
V = 160V
V = 100V
V = 40V
BY R
DS
DS
DS
DS(on)
T = 175 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
°
J
°
T = 25 C
J
V = 0 V
V ,Source-to-Drain Voltage (V)
SD
Forward Voltage
Forward Voltage
GS
100
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 175 C
Single Pulse
0.1
0.1 1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
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