lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lEase of Paralleling
lSimple Drive Requirements
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
PD - 94006
IRF640N
IRF640NS
IRF640NL
HEXFET®Power MOSFET
D
VDSS = 200V
RDS(on) = 0.15Ω
G
ID = 18A
S
TO-220AB |
D2Pak |
TO-262 |
IRF640N |
IRF640NS |
IRF640NL |
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Parameter |
Max. |
Units |
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ID @ TC = 25°C |
Continuous Drain Current, V GS @ 10V |
18 |
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ID @ TC = 100°C |
Continuous Drain Current, V GS @ 10V |
13 |
A |
IDM |
Pulsed Drain Current • |
72 |
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PD @TC = 25°C |
Power Dissipation |
150 |
W |
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Linear Derating Factor |
1.0 |
W/°C |
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VGS |
Gate-to-Source Voltage |
± 20 |
V |
EAS |
Single Pulse Avalanche Energy‚ |
247 |
mJ |
IAR |
Avalanche Current• |
18 |
A |
EAR |
Repetitive Avalanche Energy• |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt † |
8.1 |
V/ns |
TJ |
Operating Junction and |
-55 to +175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
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Mounting torque, 6-32 or M3 srew„ |
10 lbf•in (1.1N•m) |
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www.irf.com |
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1 |
10/09/00
IRF640N/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
200 |
––– |
––– |
V |
VGS = 0V, ID = 250µA |
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V(BR)DSS/ TJ |
Breakdown Voltage Temp. Coefficient |
––– |
0.25 |
––– |
V/°C |
Reference to 25°C, I D = 1mA |
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RDS(on) |
Static Drain-to-Source On-Resistance |
––– |
––– |
0.15 |
Ω |
VGS = 10V, ID = 11A ƒ |
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VGS(th) |
Gate Threshold Voltage |
2.0 |
––– |
4.0 |
V |
VDS = VGS, ID = 250µA |
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gfs |
Forward Transconductance |
6.8 |
––– |
––– |
S |
VDS = 50V, ID = 11A ƒ |
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IDSS |
Drain-to-Source Leakage Current |
––– |
––– |
25 |
µA |
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VDS = 200V, VGS = 0V |
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––– |
––– |
250 |
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VDS = 160V, VGS = 0V, TJ = 150°C |
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IGSS |
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Gate-to-Source Forward Leakage |
––– |
––– |
100 |
nA |
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VGS = 20V |
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Gate-to-Source Reverse Leakage |
––– |
––– |
-100 |
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VGS = -20V |
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Qg |
Total Gate Charge |
––– |
––– |
67 |
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ID = 11A |
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Qgs |
Gate-to-Source Charge |
––– |
––– |
11 |
nC |
VDS = 160V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
––– |
––– |
33 |
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VGS = 10V, See Fig. 6 and 13 |
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td(on) |
Turn-On Delay Time |
––– |
10 |
––– |
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VDD = 100V |
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tr |
Rise Time |
––– |
19 |
––– |
ns |
ID = 11A |
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td(off) |
Turn-Off Delay Time |
––– |
23 |
––– |
RG = 2.5Ω |
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tf |
Fall Time |
––– |
5.5 |
––– |
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RD = 9.0Ω, See Fig. 10 ƒ |
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LD |
Internal Drain Inductance |
––– |
4.5 |
––– |
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Between lead, |
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D |
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6mm (0.25in.) |
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nH |
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LS |
Internal Source Inductance |
––– |
7.5 |
––– |
from package |
G |
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and center of die contact |
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S |
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Ciss |
Input Capacitance |
––– |
1160 |
––– |
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VGS = 0V |
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Coss |
Output Capacitance |
––– |
185 |
––– |
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VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
––– |
53 |
––– |
pF |
ƒ = 1.0MHz, See Fig. 5 |
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Source-Drain Ratings and Characteristics
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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MOSFET symbol |
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D |
––– |
––– |
18 |
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(Body Diode) |
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showing the |
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A |
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ISM |
Pulsed Source Current |
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integral reverse |
G |
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(Body Diode)• |
––– |
––– |
72 |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
1.3 |
V |
TJ = 25°C, I S = 11A, VGS = 0V ƒ |
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trr |
Reverse Recovery Time |
––– |
167 |
251 |
ns |
TJ = 25°C, I F = 11A |
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Qrr |
Reverse Recovery Charge |
––– |
929 |
1394 |
nC |
di/dt = 100A/µs ƒ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Thermal Resistance
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Parameter |
Typ. |
Max. |
Units |
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RθJC |
Junction-to-Case |
––– |
1.0 |
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RθCS |
Case-to-Sink, Flat, Greased Surface „ |
0.50 |
––– |
°C/W |
RθJA |
Junction-to-Ambient„ |
––– |
62 |
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RθJA |
Junction-to-Ambient (PCB mount)… |
––– |
40 |
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www.irf.com |
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2 |
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100 |
VGS |
(A) |
TOP |
15V |
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10V |
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8.0V |
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Source Current |
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7.0V |
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6.0V |
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10 |
5.5V |
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5.0V |
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BOTTOM 4.5V |
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1 |
4.5V |
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Drain-to |
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0.1 |
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, |
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D |
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I |
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20µs PULSE WIDTH
0.01 |
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T |
J |
= 25 |
° |
C |
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0.1 |
1 |
10 |
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100 |
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VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
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IRF640N/S/L |
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100 |
VGS |
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(A) |
TOP |
15V |
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10V |
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8.0V |
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Current |
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7.0V |
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6.0V |
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5.5V |
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5.0V |
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BOTTOM4.5V |
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10 |
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-to-Source |
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4.5V |
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Drain |
1 |
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, |
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D |
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I |
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20µs PULSE WIDTH
0.1 |
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T |
J |
= 175 |
° |
C |
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0.1 |
1 |
10 |
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100 |
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VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100 |
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Drain-to-Source On Resistance |
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3.5 |
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ID = 18A |
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T |
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= 175° |
C |
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3.0 |
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J |
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2.5 |
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10 |
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(Normalized) |
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2.0 |
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T = 25° C |
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1.5 |
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1 |
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J |
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CurrentSourceDrain(A)to-- |
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1.0 |
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, |
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, |
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D |
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DS(on) |
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I |
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0.5 |
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V DS = 50V |
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VGS = 10V |
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20µs PULSE WIDTH |
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0.1 |
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R |
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0.0 |
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0 |
20 40 60 |
80 100 120 140 160 180 |
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4.0 |
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5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
10.0 |
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-60 -40 -20 |
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V |
, Gate-to-Source Voltage (V) |
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T |
, Junction Temperature(° C) |
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GS |
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J |
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Fig 3. Typical Transfer Characteristics |
Fig 4. Normalized On-Resistance |
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Vs. Temperature |
www.irf.com |
3 |
IRF640N/S/L |
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2500 |
VGS |
= 0V, f = 1 MHZ |
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Ciss = Cgs + Cgd, Cds |
SHORTED |
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2000 |
Crss |
= Cgd |
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Coss |
= Cds + Cgd |
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Capacitance(pF)C, |
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1500 |
Ciss |
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1000 |
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Coss |
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500 |
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Crss |
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0 |
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1 |
10 |
100 |
1000 |
VDS, Drain-to-Source Voltage (V)
(V) |
20 |
ID = 11A |
VDS= 160V |
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VDS= 100V |
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Voltage |
16 |
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VDS= 40V |
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-to-Source |
12 |
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8 |
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, Gate |
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GS |
4 |
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V |
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0 |
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0 |
20 |
40 |
60 |
80 |
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. |
Fig 6. Typical Gate Charge Vs. |
Drain-to-Source Voltage |
Gate-to-Source Voltage |
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100 |
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(A) |
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Drain Current |
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T = 175° C |
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J |
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10 |
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T = 25° C |
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, Reverse |
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J |
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1 |
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SD |
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I |
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0.1 |
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V GS = 0 V |
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0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
VSD ,Source-to-Drain Voltage (V)
1000 |
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OPERATION IN THIS AREA LIMITED |
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BY RDS(on) |
(A) |
100 |
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10us |
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Current |
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10 |
100us |
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Drain |
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1ms |
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, |
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D |
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10ms |
I |
1 |
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TC = 25 ° C |
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TJ = 175 °C |
Single Pulse |
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0.1 |
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0.1 |
1 |
10 |
100 |
1000 |
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode |
Fig 8. Maximum Safe Operating Area |
Forward Voltage |
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www.irf.com |
4 |
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