Philips CGY2032BTS Datasheet
INTEGRATED CIRCUITS
DATA SH EET
CGY2032BTS
DECT 500 mW power amplifier
Preliminary specification
File under Integrated Circuits, IC17
2000 Mar 14
Philips Semiconductors Preliminary specification
DECT 500 mW power amplifier CGY2032BTS
FEATURES
• Power Amplifier (PA) overall efficiency 55%
• 27.5 dBm saturated output power at 3.2 V
• 0 dBm input power
• 40 dB linear gain
• Operation without negative supply
APPLICATIONS
• 1.88 to 1.9 GHz transceivers for DECT applications
• 2 GHz transceivers: Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS).
GENERAL DESCRIPTION
• Wide operating temperature range −30 to +85 °C
• SSOP16 package.
The CGY2032BTS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
DD
I
DD
P
o
T
amb
positive supply voltage − 3.2 − V
total drain current − 350 − mA
output power − 27.5 − dBm
ambient temperature −30 − +85 °C
(1)
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
MIN. TYP. MAX. UNIT
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
CGY2032BTS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1
BLOCK DIAGRAM
V
handbook, halfpage
RFI
V
11
GND1 GND2 GND3
DD2VDD3
DD1
85
9,10 6, 7
1
CGY2032BTS
2, 3, 4
12, 13, 14
16
15
FCA080
RFO
OPM
Fig.1 Block diagram.
2000 Mar 14 2
Philips Semiconductors Preliminary specification
DECT 500 mW power amplifier CGY2032BTS
PINNING
SYMBOL PIN DESCRIPTION
V
DD3
GND3 2 third stage ground supply
GND3 3 third stage ground supply
GND3 4 third stage ground supply
V
DD2
GND2 6 second stage ground supply
GND2 7 second stage ground supply
V
DD1
GND1 9 first stage ground supply
GND1 10 first stage ground supply
RFI 11 PA input
GND3 12 third stage ground supply
GND3 13 third stage ground supply
GND3 14 third stage ground supply
OPM 15 output pre-matching
RFO 16 PA output
1 third stage supply voltage
5 second stage supply voltage
8 first stage supply voltage
handbook, halfpage
V
1
DD3
GND3
2
3
GND3
4
GND3
V
DD2
GND2
GND2
V
DD1
CGY2032BTS
5
6
7
8
FCA081
Fig.2 Pin configuration.
16
RFO
15
OPM
14
GND3
13
GND3
12
GND3
11
RFI
10
GND1
9
GND1
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2032BTS is a 3-stage GaAs power amplifier
capableofdelivering500 mW(typ.)at1.9 GHzintoa 50 Ω
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a
DC path to the supply.
The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.
This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.
Biasing
Internal biasing is provided inside the amplifier for
class AB operation.
the battery and the amplifier drains.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
T
P
P
T
DD
j(max)
tot
i
stg
operating supply voltage note 1 − 5.2 V
maximum operating junction temperature − 150 °C
total power dissipation note 2 − 450 mW
input power − 15 dBm
storage temperature −55 +125 °C
Notes
1. On Philips evaluation board.
2. On Philips evaluation board, P
maximum value is 600 mW.
tot
2000 Mar 14 3
Philips Semiconductors Preliminary specification
DECT 500 mW power amplifier CGY2032BTS
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air; note 1 145 K/W
Note
1. On Philips evaluation board, R
DC CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
“MIL STD 883C - method 3015”
value is typically 80 K/W.
th(j-a)
.
Pins V
V
DD
I
DD0
DD1,VDD2
and V
DD3
positive supply voltage 1.8 3.2 4.2 V
positive peak supply current VDD= 3.2 V −−800 mA
AC CHARACTERISTICS
V
= 3.2 V; fRF= 1900 MHz; Pi= 0 dBm; T
DD
=25°C; duty factor δ = 50%; 50 Ω impedance system; measured and
amb
guaranteed on the CGY2032BTS evaluation board; the circuit diagram is shown in Fig.5.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
i
input power −5 0 +5 dBm
δ duty factor − 50 100 %
P
o
I
DD
output power VDD= 3.2 V 26.5 27.5 29 dBm
V
= 2.2 V 24 25 27 dBm
DD
total drain current VDD= 3.2 V − 350 500 mA
= 2.2 V −−400 mA
V
DD
η efficiency − 55 − %
P
leak
RF leakage to output in power off state VDD=0V −−40 −35 dBm
H2 second harmonic level −−−30 dBc
H3 third harmonic level −−−35 dBc
Stab stability (spurious levels) note 1 −−60 − dBc
Note
1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 3 : 1 load
replaces the 50 Ω load. The device is switched on and the phase of the 3 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
2000 Mar 14 4
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