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INTEGRATED CIRCUITS
DATA SH EET
CGY2030M
DECT 500 mW power amplifier
Product specification
Supersedes data of 1996 Jul 12
File under Integrated Circuits, IC17
1997 Jan 17
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Philips Semiconductors Product specification
DECT 500 mW power amplifier CGY2030M
FEATURES
• Power Amplifier (PA) overall efficiency 40%
• 27 dB gain
• 0 dBm input power
• Operation possible without negative supply
GENERAL DESCRIPTION
The CGY2030M is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate at 3.6 V battery supply. When power
control is not required, it can be operated without negative
supply voltage.
• Wide operating temperature range −30 to +85 °C
• SSOP16 package.
APPLICATIONS
• 1.88 to 1.9 GHz transceivers for DECT applications
• 2 GHz transceivers (PHS, DCS).
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
DD
I
DD
P
o
T
amb
positive supply voltage − 3.2 − V
positive peak supply current − 400 − mA
output power − 27 − dBm
operating ambient temperature −30 − +85 °C
(1)
MIN. TYP. MAX. UNIT
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
CGY2030M SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1
BLOCK DIAGRAM
handbook, full pagewidth
RFI
V
DD1
916
2, 3, 4, 6, 7,
11, 12, 14, 15
V
DD2
58
V
GG1
V
DD3
13
CGY2030M
10 1
V
GG2
RFO/V
MBG631
DD4
Fig.1 Block diagram.
1997 Jan 17 2
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Philips Semiconductors Product specification
DECT 500 mW power amplifier CGY2030M
PINNING
SYMBOL PIN DESCRIPTION
V
GG2
GND 2 to 4 ground
V
DD2
GND 6 and 7 ground
V
DD1
RFI 9 PA input
V
GG1
GND 11 and 12 ground
V
DD3
GND 14 and 15 ground
RFO/V
DD4
1 fourth stage negative gate
supply voltage
5 second stage supply voltage
8 first stage supply voltage
10 first second and third stages
negative gate supply voltage
13 third stage supply voltage
16 PA output and fourth stage
supply voltage
handbook, halfpage
V
1
GG2
2
GND
3
GND
4
GND
V
GND
GND
V
DD2
DD1
CGY2030M
5
6
7
8
MBG630
Fig.2 Pin configuration.
16
15
14
13
12
11
10
9
RFO/V
GND
GND
V
DD3
GND
GND
V
GG1
RFI
DD4
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2030M is a 4-stage GaAs MESFET power
amplifier capable of delivering 500 mW (typ.) at 1.9 GHz
into a 50 Ω load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
The amplifier can be switched off by means of an external
PNP series switch connected between the battery and the
amplifier drains. This switch can also be used to vary the
actual supply voltage applied to the amplifier and hence,
control the output power.
This device is specifically designed to work with a
maximum duty factor of 25%.
Biasing
Two modes of operation are possible:
• Mode 1
• Mode 2.
MODE 1
In the first mode, the pins V
GG1
and V
are simply
GG2
connected together to the ground via resistors (10 kΩ in
the evaluation board; see Fig.4). The amplifier biases itself
internally to a negative voltage by action of the incoming
RF signal. In this mode, power control cannot be achieved
by varying the amplifier supply voltage; therefore it is
suitable only for applications where power control is not
required such as DECT.
M
ODE 2
If a negative bias is available, a second mode of operation
is possible, in which the amplifier is biased by providing
adequate negative voltages at pins V
GG1
and V
GG2
. In this
mode, the amplifier internal bias does not depend on the
incoming RF level, nor on the drain voltage, so that power
control is possible by variation of the supply voltage.
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Philips Semiconductors Product specification
DECT 500 mW power amplifier CGY2030M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DD
− V
V
DD
T
j(max)
P
tot
T
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
operating supply voltage −−5.2 V
voltage difference between supply voltage
GG
no input signal −−8V
and gate bias voltage
maximum operating junction temperature −−150 °C
total power dissipation −−400 mW
IC storage temperature −55 − +125 °C
thermal resistance from junction to ambient in free air 145 K/W
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with
“MIL STD 883C - method 3015”
.
DC CHARACTERISTICS
V
DD
= 3.2 V; T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pins RFO/V
V
DD
I
DD
Pins V
GG1
V
GG1
V
GG2
I
GG(tot)
DD4,VDD3
positive supply voltage 2.6 3.2 4.2 V
positive peak supply current − 400 500 mA
and V
bias voltage for input stages note 1 −−1.2 − V
bias voltage for output stage note 1 −−2.0 − V
total gate peak current note 2 −1 − +1 mA
, V
; in mode 2
GG2
DD2
and V
DD1
Notes
1. Negative voltages V
GG1
and V
must be applied before supply voltage VDD.
GG2
2. Due to non linear effects at high power levels, the gate current can be either negative or positive.
1997 Jan 17 4