Philips CGY2030M Datasheet

INTEGRATED CIRCUITS

DATA SH EET

CGY2030M

DECT 500 mW power amplifier

Product specification
Supersedes data of 1996 Jul 12
File under Integrated Circuits, IC17

1997 Jan 17

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2030M

FEATURES

• Power Amplifier (PA) overall efficiency 40%

• 27 dB gain

• 0 dBm input power

• Operation possible without negative supply

GENERAL DESCRIPTION

The CGY2030M is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate at 3.6 V battery supply. When power
control is not required, it can be operated without negative
supply voltage.

• Wide operating temperature range −30 to +85 °C

• SSOP16 package.

APPLICATIONS

• 1.88 to 1.9 GHz transceivers for DECT applications

• 2 GHz transceivers (PHS, DCS).

QUICK REFERENCE DATA

SYMBOL PARAMETER

V

DD

I

DD

P

o

T

amb

positive supply voltage − 3.2 − V
positive peak supply current − 400 − mA
output power − 27 − dBm
operating ambient temperature −30 − +85 °C

(1)

MIN. TYP. MAX. UNIT

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

CGY2030M SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1

BLOCK DIAGRAM

handbook, full pagewidth

RFI

V

DD1

916

2, 3, 4, 6, 7,
11, 12, 14, 15

V

DD2

58

V

GG1

V

DD3

13

CGY2030M

10 1

V

GG2

RFO/V

MBG631

DD4

Fig.1 Block diagram.

1997 Jan 17 2

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2030M

PINNING

SYMBOL PIN DESCRIPTION

V

GG2

GND 2 to 4 ground
V

DD2

GND 6 and 7 ground
V

DD1

RFI 9 PA input
V

GG1

GND 11 and 12 ground
V

DD3

GND 14 and 15 ground
RFO/V

DD4

1 fourth stage negative gate

supply voltage

5 second stage supply voltage

8 first stage supply voltage

10 first second and third stages

negative gate supply voltage

13 third stage supply voltage

16 PA output and fourth stage

supply voltage

handbook, halfpage

V

1

GG2

2

GND

3

GND

4

GND

V

GND
GND

V

DD2

DD1

CGY2030M

5
6
7
8

MBG630

Fig.2 Pin configuration.

16
15
14
13
12
11
10

9

RFO/V

GND
GND

V

DD3

GND
GND

V

GG1

RFI

DD4

FUNCTIONAL DESCRIPTION
Amplifier

The CGY2030M is a 4-stage GaAs MESFET power
amplifier capable of delivering 500 mW (typ.) at 1.9 GHz
into a 50 Ω load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.

The amplifier can be switched off by means of an external
PNP series switch connected between the battery and the
amplifier drains. This switch can also be used to vary the
actual supply voltage applied to the amplifier and hence,
control the output power.

This device is specifically designed to work with a
maximum duty factor of 25%.

Biasing

Two modes of operation are possible:

• Mode 1

• Mode 2.

MODE 1
In the first mode, the pins V

GG1

and V

are simply

GG2

connected together to the ground via resistors (10 kΩ in
the evaluation board; see Fig.4). The amplifier biases itself
internally to a negative voltage by action of the incoming
RF signal. In this mode, power control cannot be achieved
by varying the amplifier supply voltage; therefore it is
suitable only for applications where power control is not
required such as DECT.

M

ODE 2

If a negative bias is available, a second mode of operation
is possible, in which the amplifier is biased by providing
adequate negative voltages at pins V

GG1

and V

GG2

. In this
mode, the amplifier internal bias does not depend on the
incoming RF level, nor on the drain voltage, so that power
control is possible by variation of the supply voltage.

1997 Jan 17 3

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2030M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

− V

V

DD

T

j(max)

P

tot

T

stg

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

operating supply voltage −−5.2 V
voltage difference between supply voltage

GG

no input signal −−8V

and gate bias voltage
maximum operating junction temperature −−150 °C
total power dissipation −−400 mW
IC storage temperature −55 − +125 °C

thermal resistance from junction to ambient in free air 145 K/W

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with

“MIL STD 883C - method 3015”

.

DC CHARACTERISTICS

V

DD

= 3.2 V; T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins RFO/V

V

DD

I

DD

Pins V

GG1

V

GG1

V

GG2

I

GG(tot)

DD4,VDD3

positive supply voltage 2.6 3.2 4.2 V
positive peak supply current − 400 500 mA

and V

bias voltage for input stages note 1 −−1.2 − V
bias voltage for output stage note 1 −−2.0 − V
total gate peak current note 2 −1 − +1 mA

, V

; in mode 2

GG2

DD2

and V

DD1

Notes

1. Negative voltages V

GG1

and V

must be applied before supply voltage VDD.

GG2

2. Due to non linear effects at high power levels, the gate current can be either negative or positive.

1997 Jan 17 4