Philips BF622, BF620 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BF620; BF622
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 21
Philips Semiconductors Product specification
NPN high-voltage transistors BF620; BF622
FEATURES
• Low current (max. 50 mA)
PINNING
PIN DESCRIPTION
• High voltage (max. 300 V).
APPLICATIONS
• Video output stages.
DESCRIPTION
handbook, halfpage
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
MARKING
TYPE NUMBER MARKING CODE
BF620 DC
BF622 DA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 emitter
2 collector
3 base
2
3
1
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
SYMBOL P ARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF620 − 300 V
BF622 − 250 V
V
CEO
collector-emitter voltage open-base
BF620 − 300 V
BF622 − 250 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C; note 1 − 1.25 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
.
1999 Apr 21 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF620; BF622
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 100 K/W
thermal resistance from junction to soldering point 20 K/W
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector cut-off current IE= 0; VCB= 200 V − 10 nA
I
= 0; VCB= 200 V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 25 mA; VCE=20V 50 −
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 600 mV
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1999 Apr 21 3
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