Philips bf591 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D067

BF591; BF593

NPN high-voltage transistors

Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 Jul 02

Philips Semiconductors Product specification

NPN high-voltage transistors BF591; BF593

FEATURES

• Low current (max. 150 mA)

• High voltage (max. 210 V).

APPLICATIONS

• Telephone systems.

DESCRIPTION

NPN high-voltage transistor in a TO-202; SOT128B plastic
package.

PINNING

PIN DESCRIPTION

1 emitter
2 collector, connected to mounting base
3 base

handbook, halfpage

2

3

1

123

MAM305

Fig.1 Simplified outline (TO-202; SOT128B)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BF591 − 210 V
BF593 − 250 V

V

CEO

collector-emitter voltage open base

BF591 − 170 V

BF593 − 210 V
I
P
h

CM

tot

FE

peak collector current − 300 mA
total power dissipation T

≤ 55 °C − 1.3 W

amb

DC current gain IC= 20 mA; VCE=5V 30 −

= 100 mA; VCE=6V 30 −

I

C

1997 Jul 02 2

Philips Semiconductors Product specification

NPN high-voltage transistors BF591; BF593

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter

BF591 − 210 V

BF593 − 250 V

collector-emitter voltage open base

BF591 − 170 V

BF593 − 210 V

emitter-base voltage open collector − 5V
collector current (DC) − 150 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T

≤ 55 °C − 1.3 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 73 K/W

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

collector cut-off current IE= 0; VCB=60V − 50 nA

I

= 0; VCB=60V; Tj= 140 °C − 1 µA

E

emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain note 1

= 20 mA; VCE=5V 30 −

I

C

I

= 100 mA; VCE=6V 30 −

C

I

= 150 mA; VCE=7V 20 −

C

Note

1. Pulse test: t

≤ 300 µs; δ≤0.01.

p

1997 Jul 02 3