Philips BF585 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D067
BF585; BF587
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 21
Philips Semiconductors Product specification
NPN high-voltage transistors BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
DESCRIPTION
NPN transistors in a TO-202; SOT128B plastic package.
2
3
1
PNP complement: BF588.
PINNING
123
MBH793
PIN DESCRIPTION
1 emitter
2 collector
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
3 base
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF585 − 350 V
BF587 − 400 V
V
CEO
collector-emitter voltage open base
BF585 − 300 V
BF587 − 350 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation in free air; T
in free air; T
≤ 25 °C − 1.6 W
amb
≤ 25 °C − 5W
mb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 21 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF585; BF587
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
R
th j-mb
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
C
re
f
T
thermal resistance from junction to ambient 78 K/W
thermal resistance from junction to mounting base 25 K/W
collector cut-off current IE= 0; VCB= 300 V − 20 nA
I
= 0; VCB= 250 V; Tj= 150 °C − 20 µA
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 25 mA; VCE=20V 50 −
I
= 40 mA; VCE=20V 20 −
C
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 600 mV
collector capacitance IE=ie= 0; VCB= 30 V; f = 1 MHz − 2.5 pF
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.8 pF
transition frequency IC= 10 mA; VCE= 10 V 70 110 MHz
1999 Apr 21 3
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