Philips bf583 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D067

BF583; BF585; BF587

NPN high-voltage transistors

Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1996 Dec 09

Philips Semiconductors Product specification

NPN high-voltage transistors BF583; BF585; BF587

FEATURES

• Low feedback capacitance.

handbook, halfpage

APPLICATIONS

• For use in video output stages of black and white and
colour television receivers.

DESCRIPTION

NPN transistors in a TO-202 plastic package.

2

3

1

PINNING

PIN DESCRIPTION

123

MBH793

1 emitter
2 collector

Fig.1 Simplified outline (TO-202) and symbol.

3 base

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BF583 − 300 V
BF585 − 350 V
BF587 − 400 V

V

CEO

collector-emitter voltage open base

BF583 − 250 V
BF585 − 300 V

BF587 − 350 V
I
P
h
C
f

CM

tot
FE

re

T

peak collector current − 100 mA
total power dissipation in free air; T

≤ 25 °C − 1.6 W

amb

DC current gain IC= 25 mA; VCE=20V − 50
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.8 pF
transition frequency IC= 10 mA; VCE= 10 V 70 110 MHz

1996 Dec 09 2