DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
BF570
NPN medium frequency transistor
Product specification
Supersedes data of September 1994
1997 Mar 04
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN medium frequency transistor BF570
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 15 V)
• Low feedback capacitance (max. 2.2 pF).
APPLICATIONS
• Monitors
• Battery equipped applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
BF570 B26
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
DC current gain IC= 10 mA; VCE=1V 40 −
transition frequency IC= 40 mA; VCE= 10 V; f = 100 MHz 490 − MHz
1997 Mar 04 2
Philips Semiconductors Product specification
NPN medium frequency transistor BF570
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
THERMAL CHARACTERISTICS
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 500 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
C
re
f
T
collector cut-off current IE= 0; VCB=20V −−400 nA
= 0; VCB=20V; Tj= 125 °C −−30 µA
I
E
emitter cut-off current IC= 0; VEB=2V −−100 nA
DC current gain IC= 10 mA; VCE=1V 40 −−
feedback capacitance IC= 0; VCE= 10 V; f = 1 MHz − 1.6 2.2 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 −−MHz
= 40 mA; VCE= 10 V; f = 100 MHz 490 −−MHz
I
C
1997 Mar 04 3