Philips BF547W Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF547W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
June 1994
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BF547W
FEATURES
• Stable oscillator operation
• High current gain
• Good thermal stability.
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
Top view
Marking code: E2.
Fig.1 SOT323
3
12
MBC870
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
P
h
C
f
CBO
CEO
C
tot
FE
re
T
collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−20 V
collector current (DC) −−50 mA
total power dissipation up to Ts=63°C; note 1 −−300 mW
DC current gain IC= 2 mA; VCE= 10 V 40 95 250
feedback capacitance IC= 0; VCB=10V; f=1MHz − 1 − pF
transition frequency IC= 15 mA; VCE=10V;
0.8 1.2 1.6 GHz
f = 500 MHz
G
UM
maximum unilateral power gain IC= 1 mA; VCE=10V;
f = 100 MHz; T
amb
=25°C
− 20 − dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 3V
collector current (DC) − 50 mA
total power dissipation up to Ts=63°C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − +150 °C
Note to the “Quick reference data” and “Limiting values”
1. T
is the temperature at the soldering point of the collector pin.
s
June 1994 2
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BF547W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C (unless otherwise specified).
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
thermal resistance from junction to soldering point up to Ts=63°C; note 1 290 K/W
is the temperature at the soldering point of the collector pin.
collector-base breakdown
IC= 0.01 mA; IE=0 −−30 V
voltage
collector-emitter breakdown
IC= 10 mA; IB=0 −−20 V
voltage
emitter-base breakdown voltage IE= 0.01 mA; IC=0 −−3V
collector cut-off current IE= 0; VCB=10V −−100 nA
DC current gain IC= 2 mA; VCE= 10 V 40 95 250
feedback capacitance IC= 0; VCB= 10 V; f = 1 MHz − 1 − pF
transition frequency IC= 15 mA; VCE=10V;
0.8 1.2 1.6 GHz
f = 500 MHz
maximum unilateral power gain;
note 1
IC= 1 mA; VCE=10V;
f = 100 MHz; T
amb
=25°C;
− 20 − dB
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
2
s
G
UM
10
-----------------------------------------------------------1s
–()1s
21
2
11
–()
dB.log=
2
22
June 1994 3
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BF547W
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
T ( C)
Fig.2 Power derating curve.
s
MLB587
o
140
handbook, halfpage
h
FE
100
60
20
1
VCE= 10V; Tj=25°C.
110
10
I (mA)
C
Fig.3 DC current gain as a function of collector
current; typical values.
MBB397
2
10
handbook, halfpage
2
C
re
(pF)
1.6
1.2
0.8
0.4
0
0
IC= 0; f = 1 MHz.
48
12 16
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLB588
V (V)
CB
1.4
handbook, halfpage
f
T
(GHz)
1
0.6
0.2
20
VCE= 10 V; f = 500 MHz.
1
110
10
MLB589
I (mA)
C
2
10
Fig.5 Transition frequency as a function
of collector current; typical values.
June 1994 4
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