Philips BF547 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BF547

NPN 1 GHz wideband transistor

Product speciﬁcation File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product speciﬁcation

NPN 1 GHz wideband transistor BF547

FEATURES

• Feedback capacitance typ. 1 pF

DESCRIPTION

Low cost NPN transistor in a plastic SOT23 package.

• Stable oscillator operation

• High current gain

• Good thermal stability.

handbook, halfpage

3

APPLICATIONS

• It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator.

PINNING

12

Top view

MSB003

PIN DESCRIPTION

1 base 2 emitter

Marking code: E16.

Fig.1 SOT23.

3 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CEO

V

CBO

V

EBO

I

CM

P

tot

f

T

C

re

collector-emitter voltage open base − 20 V collector-base voltage open emitter − 30 V emitter-base voltage open collector − 3V peak collector current − 50 mA total power dissipation up to Ts=70°C; note 1 − 300 mW transition frequency IC= 15 mA; VCE10 V; f = 500 MHz 1.2 1.6 GHz feedback capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz 1 − pF

Note

1. T

is the temperature at the soldering point of the collector pin.

s

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CEO

V

CBO

V

EBO

I

CM

P

tot

T

stg

T

j

collector-emitter voltage open base − 20 V collector-base voltage open emitter − 30 V emitter-base voltage open collector − 3V peak collector current − 50 mA total power dissipation up to Ts=70°C; note 1 − 300 mW storage temperature range −65 +150 °C junction temperature − 150 °C

Note

is the temperature at the soldering point of the collector pin.

1. T

s

September 1995 2

Philips Semiconductors Product speciﬁcation

NPN 1 GHz wideband transistor BF547

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

Note

1. T

s

CHARACTERISTICS

=25°C unless otherwise speciﬁed.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

re

G

UM

from junction to soldering point note 1 260 K/W

is the temperature at the soldering point of the collector pin.

collector cut-off current IE= 0; VCB=10V −−100 nA DC current gain IC= 2 mA; VCE= 10 V 40 95 250 transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 0.8 1.2 1.6 GHz feedback capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 1 − pF maximum unilateral power

IC= 1 mA; VCE= 10 V; f = 100 MHz − 20 − dB

gain; note 1

Note

1. G

handbook, halfpage

is the maximum unilateral power gain, assuming S12 is zero and .

UM

400

P

tot

(mW)

300

200

100

0

0 50 100 200

150

Ts (

MBB401

o

C)

140

handbook, halfpage

h

FE

100

60

20

1

2

S

G

UM

10 log

--------------------------------------------------------------



1S

–



110

21

2



1S

–



11

10

I (mA)

22

MBB397

C

10

dB=

2

Fig.2 Power derating curve.

September 1995 3

VCE=10V.

Fig.3 DC current gain as a function of collector

current.

Philips Semiconductors Product speciﬁcation

NPN 1 GHz wideband transistor BF547

1.6

handbook, halfpage

C

re

(pF)

0.8

0

0.1

IE=ie= 0; f= 1 MHz.

1 10 100

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage

MBB474

1.4

handbook, halfpage

f

T

(GHz)

1.0

0.6

0.2

−1

10

VCE= 10 V; f = 500 MHz.

110

IC (mA)

Fig.5 Transition frequency as a function of

collector current.

MBB399

2

10

40

handbook, halfpage

G

UM

(dB)

30

20

10

0

0102030

VCE= 10 V; f = 100 MHz.

IC (mA)

Fig.6 Maximum unilateral power gain as a

function of collector current.

MBB407

50

handbook, halfpage

G

UM

(dB)

40

30

20

10

0

−10 10

VCE= 10 V; IC=15mA.

2

10

3

10

f (MHz)

Fig.7 Maximum unilateral power gain as a

function of frequency.

MBB408

4

10

September 1995 4