Philips BF545C, BF545B, BF545A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF545A; BF545B; BF545C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage (max. 2.2 V for BF545A).
APPLICATIONS
• Impedance converters in e.g. electret microphones and
infra-red detectors
• VHF amplifiers in oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 s source
2 d drain
3 g gate
handbook, halfpage
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
21
Top view
Fig.1 Simplified outline and symbol.
BF545A; BF545B; BF545C
d
s
3
g
MAM036
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
DSS
DS
GSoff
drain-source voltage −±30 V
gate-source cut-off voltage ID=1µA; VDS=15V −0.4 −7.8 V
drain current VGS= 0; VDS=15V
BF545A 2 6.5 mA
BF545B 6 15 mA
BF545C 12 25 mA
P
tot
y
forward transfer admittance VGS= 0; VDS= 15 V 3 6.5 mS
fs
total power dissipation up to T
=25°C − 250 mW
amb
1996 Jul 29 2
Philips Semiconductors Product specification
N-channel silicon junction
BF545A; BF545B; BF545C
field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
handbook, halfpage
P
(mW)
drain-source voltage −±30 V
gate-source voltage open drain −−30 V
gate-drain voltage (DC) open source −−30 V
forward gate current (DC) − 10 mA
total power dissipation up to T
=25°C; note 1 − 250 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
2
.
400
tot
300
MBB688
200
100
0
0 50 100 200
150
T
amb
Fig.2 Power derating curve.
(°C)
1996 Jul 29 3
Philips Semiconductors Product specification
N-channel silicon junction
BF545A; BF545B; BF545C
field-effect transistors
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
STATIC CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
V
GSoff
I
DSS
I
GSS
forward transfer admittance VGS= 0; VDS=15V 3 − 6.5 mS
y
fs
common source output
y
os
thermal resistance from junction to ambient; note 1 500 K/W
2
.
gate-source breakdown voltage IG= −1 µA; VDS=0 −30 −−V
gate-source cut-off voltage ID= 200 µA; VDS=15V
BF545A −0.4 −−2.2 V
BF545B −1.6 −−3.8 V
BF545C −3.2 −−7.8 V
=1µA; VDS=15V −0.4 −−7.5 V
I
D
drain current VGS= 0; VDS=15V
BF545A 2 − 6.5 mA
BF545B 6 − 15 mA
BF545C 12 − 25 mA
gate leakage current VGS= −20 V; VDS=0 −−0.5 −1000 pA
= −20 V; VDS=0;
V
GS
−−−100 nA
Tj= 125 °C
VGS= 0; VDS=15V − 40 −µS
admittance
1996 Jul 29 4
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