Philips BF512, BF511, BF510, BF513 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1997
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1 = gate
2 = drain
3 = source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
3
g
12
Top view
MAM385
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
Drain-source voltage V
Drain current (DC or average) I
max. 20 V
DS
max. 30 mA
D
Total power dissipation
up to T
=40°CP
amb
max. 250 mW
tot
BF510 511 512 513
Drain current > 0.7 2.5 6 10 mA
= 10 V; VGS= 0 I
V
DS
< 3.0 7.0 12 18 mA
DSS
Transfer admittance (common source)
V
= 10 V; VGS= 0; f = 1 kHz yfs > 2.5 4 6 7 mS
DS
Feedback capacitance
V
= 10 V; VGS=0 C
DS
V
= 10 V; ID= 5 mA C
DS
typ. 0.3 0.3 −−pF
rs
typ. −−0.3 0.3 pF
rs
Noise figure at optimum source admittance
G
= 1 mS; −BS= 3 mS; f = 100 MHz
S
= 10 V; VGS= 0 F typ. 1.5 1.5 −−dB
V
DS
V
= 10 V; ID= 5 mA F typ. −−1.5 1.5 dB
DS
December 1997 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage V
Drain-gate voltage (open source) V
Drain current (DC or average) I
Gate current ± I
Total power dissipation up to T
=40°C (note 1) P
amb
Storage temperature range T
Junction temperature T
THERMAL RESISTANCE
DS
DGO
D
G
tot
stg
j
max. 20 V
max. 20 V
max. 30 mA
max. 10 mA
max. 250 mW
−65 to + 150 °C
max. 150 °C
From junction to ambient (note 1) R
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
=25°C
T
amb
BF510 511 512 513
Gate cut-off current
= 0.2 V; VDS=0 −I
−V
GS
GSS
< 10 10 10 10 nA
Gate-drain breakdown voltage
IS=0;−ID=10µA −V
(BR)GDO
> 20 20 20 20 V
Drain current
VDS= 10 V; VGS=0 I
DSS
>
<
0.7
3.0
Gate-source cut-off voltage
I
=10µA; VDS= 10 V −V
D
(P)GS
typ. 0.8 1.5 2.2 3 V
th j-a
2.5
7.0
= 430 K/W
6
12
1018mA
mA
December 1997 3
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