Philips BF488 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF488
PNP high-voltage transistor
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 27
Philips Semiconductors Product specification
PNP high-voltage transistor BF488
FEATURES
• Low feedback capacitance.
PINNING
PIN DESCRIPTION
1 base
APPLICATIONS
• Intended for use in video output stages of black and
2 collector
3 emitter
white and colour television receivers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BF483, BF485 and BF487.
handbook, halfpage
1
2
3
1
MAM285
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−350 V
collector-emitter voltage open base −−350 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 830 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
3
Note
1. Transistor mounted on a printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP high-voltage transistor BF488
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise stated.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
C
re
f
T
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current IE= 0; VCB= −300 V −−20 nA
I
= 0; VCB= −200 V; Tj= 150 °C −−20 µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −25 mA; VCE= −20 V 50 −
I
= −40 mA; VCE= −20 V 20 −
C
collector-emitter saturation voltage IC= −20 mA; IB= −2mA −−0.5 V
collector capacitance IE=ie= 0; VCB= −20 V; f = 1 MHz − 4pF
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1 MHz − 2.5 pF
transition frequency IC= −10 mA; VCE= −10 V;
70 110 MHz
f = 100 MHz
1999 Apr 27 3
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