Philips bf485pn DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
book, halfpage
M3D302
BF485PN
NPN/PNP high voltage transistors
Product specification 2000 Aug 02
Philips Semiconductors Product specification
NPN/PNP high voltage transistors BF485PN
FEATURES
PINNING
• High voltage (max. 350 V)
• Low current (max. 200 mA)
• High power dissipation (600 mW)
• Two independently working transistors.
APPLICATIONS
• Complementary high-voltage configurations
handbook, halfpage
• Hook switch in telephone applications.
DESCRIPTION
NPN/PNP transistors in a SOT457 (SC-74) plastic
package.
MARKING CODE
TYPE NUMBER CODE
BF485PN HS
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134).
PIN DESCRIPTION
1 and 4 emitter TR1; TR2
5 and 2 base TR1; TR2
6 and 3 collector TR1; TR2
56
132
Top view
4
TR1
132
456
TR2
MAM439
Fig.1 Simplified outline (SOT457) and symbol
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 350 V
collector-emitter voltage open base − 350 V
emitter-base voltage open collector − 6V
output current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature range −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
2
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
.
2000 Aug 02 2
Philips Semiconductors Product specification
NPN/PNP high voltage transistors BF485PN
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
from junction to ambient in free air; note 1 208 K/W
2
.
collector-base cut-off current IE= 0; VCB= 300 V; − 50 nA
I
= 0; VCB= 250 V; Tj= 150 °C − 50 µA
E
emitter-base cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 1 mA; VCE=10V 60 −
I
= 30 mA; VCE=10V 50 −
C
saturation voltage IC= 20 mA; IB=2mA − 250 mV
saturation voltage IC= 20 mA; IB=2mA − 850 mV
collector capacitance IE=Ie= 0; VCB= 20 V; f = 1 MHz − 6pF
transition frequency IC= 10 mA; VCE= 20 V; f = 100 MHz 50 − MHz
300
handbook, halfpage
h
FE
200
100
0
−1
10
TR1 (NPN); VCE=10V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −55 °C.
(1)
(2)
(3)
1
10 10
MLD391
IC (mA)
Fig.2 DC current gain as a function of collector
current: typical values.
200
handbook, halfpage
2
TR1 (NPN).
(1) I
(2) IB= 27 mA.
(3) IB= 24 mA.
(4) IB= 21 mA.
(6)
I
C
(mA)
150
100
50
0
02
= 30 mA.
B
(2)(3)(4)(5)
4
(5) I
= 18 mA.
B
(6) IB= 15 mA.
(7) IB= 12 mA.
(1)
(7)
(8)
(9)
(10)
68
MLD392
VCE (V)
(8) IB= 9 mA.
(9) IB= 6 mA.
(10) IB= 3 mA.
10
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2000 Aug 02 3
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