Philips BF487, BF485 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF483; BF485; BF487
NPN high-voltage transistors
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 12
Philips Semiconductors Product specification
NPN high-voltage transistors BF483; BF485; BF487
FEATURES
• Low feedback capacitance.
PINNING
PIN DESCRIPTION
1 base
APPLICATIONS
• Intended for use in video output stages in
2 collector
3 emitter
black-and-white and in colour television receivers.
DESCRIPTION
handbook, halfpage
NPN transistors in a TO-92 plastic package.
PNP complement: BF488
1
2
3
1
MAM259
Fig.1 Simplified outline (TO-92) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF483 − 300 V
BF485 − 350 V
BF487 − 400 V
V
CEO
collector-emitter voltage open base
BF483 − 250 V
BF485 − 300 V
BF487 − 350 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 830 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2
3
Note
1. Transistor mounted on a printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF483; BF485; BF487
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current IE= 0; VCB= 300 V − 20 nA
I
= 0; VCB= 250 V; Tj= 150 °C − 20 µA
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain IC= 25 mA; VCE=20V 50 −
I
= 40 mA; VCE=20V 20 −
C
collector-emitter saturation voltage IC= 30 mA; IB=5mA − 600 mV
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz − 1.4 pF
transition frequency IC= −10 mA; VCE= 10 V; f = 100 MHz 70 110 MHz
1999 Apr 12 3
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