DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BF470; BF472
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
1996 Dec 09
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
PNP high-voltage transistors BF470; BF472
FEATURES
• Low feedback capacitance.
APPLICATIONS
handbook, halfpage
2
• Class-B video output stages in television receivers and
for high-voltage IF output stages.
DESCRIPTION
3
1
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
123
Top view
MAM272
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to mounting base
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
3 base
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF470 −−250 V
BF472 −−300 V
V
CEO
collector-emitter voltage open base
BF470 −−250 V
BF472 −−300 V
I
P
h
C
f
CM
tot
FE
re
T
peak collector current −−100 mA
total power dissipation Tmb≤ 114 °C − 1.8 W
DC current gain IC= −25 mA; VCE= −20 V 50 −
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1 MHz − 1.8 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
1996 Dec 09 2