Philips bf457 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BF457; BF458; BF459
NPN high-voltage transistors
Product specification
Supersedes data of September 1994
1996 Dec 09
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN high-voltage transistors BF457; BF458; BF459
DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
handbook, halfpage
2
APPLICATIONS
• Intended for video output stages in black-and-white and
3
in colour television receivers.
1
PINNING
PIN DESCRIPTION
123
Top view
MAM254
1 emitter
2 collector, connected to mounting base
3 base
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF457 −−160 V
BF458 −−250 V
BF459 −−300 V
V
CEO
collector-emitter voltage open base
BF457 −−160 V
BF458 −−250 V
BF459 −−300 V
I
CM
P
tot
h
FE
C
re
f
T
peak collector current −−300 mA
total power dissipation Tmb≤ 90 °C −−6W
DC current gain IC= 30 mA; VCE=10V 26 −−
feedback capacitance IC=ic= 0; VCE= 30 V; f = 1 MHz −−3.5 pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz − 90 − MHz
1996 Dec 09 2
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