Philips BF450 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF450
PNP medium frequency transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
Philips Semiconductors Product specification
PNP medium frequency transistor BF450
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• HF and IF stages in radio receivers
• Mixer stages in AM receivers.
handbook, halfpage
DESCRIPTION
1
2
3
3
1
PNP medium frequency transistor in a TO-92; SOT54
plastic package.
MAM271
2
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
peak collector current −−25 mA
total power dissipation T
≤ 25 °C − 300 mW
amb
DC current gain IC= −1 mA; VCE= −10 V 50 −
transition frequency IC= −1 mA; VCE= −10 V; f = 100 MHz 350 − MHz
1997 Jul 11 2
Philips Semiconductors Product specification
PNP medium frequency transistor BF450
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−4V
collector current (DC) −−25 mA
peak collector current −−25 mA
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 420 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
collector cut-off current IE= 0; VCB= −30 V −−50 nA
I
= 0; VCB= −30 V; T
E
= 150 °C −−4µA
amb
emitter cut-off current IC= 0; VEB= −3V −−100 nA
DC current gain IC= −1 mA; VCE= −10 V 50 −
base-emitter voltage IC= −1 mA; VCE= −10 V −680 −780 mV
feedback capacitance IC= 0; VCB= −10 V; f = 1 MHz − 0.55 pF
transition frequency IC= −1 mA; VCE= −10 V; f = 100 MHz 350 − MHz
1997 Jul 11 3
Loading...