Philips bf421l, bf423l DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF421L; BF423L
PNP high-voltage transistors
Product specification
Supersedes data of 1997 Apr 18
1999 Apr 21
Philips Semiconductors Product specification
PNP high-voltage transistors BF421L; BF423L
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V)
• Available with a higher power rating (830 mW) under
type numbers: BF423.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
APPLICATIONS
• Primarily intended for telephony applications.
handbook, halfpage
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: BF422L.
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF421L −−300 V
BF423L −−250 V
V
CEO
collector-emitter voltage open base
BF421L −−300 V
BF423L −−250 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−50 mA
peak collector current −−100 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 625 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 21 2
Philips Semiconductors Product specification
PNP high-voltage transistors BF421L; BF423L
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
thermal resistance from junction to ambient note 1 200 K/W
collector cut-off current IE= 0; VCB= −200 V −−10 nA
I
= 0; VCB= −200 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−10 µA
DC current gain IC= −25 mA; VCE= −20 V 50 −
collector-emitter saturation voltage IC= −30 mA; IB= −5 mA; note 1 −−600 mV
feedback capacitance IC=ic= 0; VCE= −30 V; f = 1 MHz − 1.6 pF
transition frequency IC= −10 mA; VCE= −10 V; f = 100 MHz 60 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 21 3
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