Philips BF419 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D100
BF419
NPN high-voltage transistor
Product specification
Supersedes data of September 1994
1997 Apr 09
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN high-voltage transistor BF419
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 250 V).
APPLICATIONS
• Driver for line output transistors in colour television
receivers.
DESCRIPTION
NPN high-voltage transistor in a TO-126; SOT32 plastic
package.
PINNING
PIN DESCRIPTION
1 emitter
2 collector connected to mounting base
3 base
handbook, halfpage
3
123
Top view
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
2
1
MAM254
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
C
re
f
T
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 250 V
peak collector current − 300 mA
total power dissipation Tmb≤ 90 °C − 6W
DC current gain IC= 20 mA; VCE=10V 45 −
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 3.5 pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
1997 Apr 09 2
Philips Semiconductors Product specification
NPN high-voltage transistor BF419
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 300 V
collector-emitter voltage open base − 250 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current note 1 − 300 mA
peak base current − 100 mA
total power dissipation Tmb≤ 90 °C − 6W
≤ 70 °C − 800 mW
T
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Precautions should be taken during switch-on of the BF419 where an overshoot of current is likely to occur.
The amplitude of the overshoot depends on the relative magnitude of stray external capacities to the transistor
collector capacity. It is desirable to keep the stray capacities to a minimum by short lead lengths etc. so as to minimize
the area of the switching path.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
R
th j-a
th j-mb
thermal resistance from junction to ambient 100 K/W
thermal resistance from junction to mounting base 10 K/W
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
C
re
f
T
collector cut-off current IE= 0; VCB= 250 V − 50 nA
emitter cut-off current IC= 0; VEB=3V − 50 nA
DC current gain IC= 20 mA; VCE=10V 45 −
collector-emitter saturation voltage IC= 200 mA; IB= 20 mA; note 1 − 6V
collector capacitance IE=ie= 0; VCB=30V; f=1MHz − 4.5 pF
feedback capacitance IC=ic= 0; VCE=30V; f=1MHz − 3.5 pF
transition frequency IC= 15 mA; VCE= 10 V; f = 100 MHz 90 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 Apr 09 3
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