Philips bf410c, bf 410d DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BF410A to D
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1990
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF410A to D
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in a plastic TO-92 variant;
intended for applications up to the
PINNING - TO-92 VARIANT
1 = drain
2 = source
3 = gate
VHF range.
These FETs can be supplied in four
I
groups. Special features are the
DSS
low feedback capacitance and the low
noise figure. Thanks to these special
handbook, halfpage
features the BF410 is very suitable for
applications such as the RF stages in
FM portables (type A), car radios
(type B) and mains radios (type C) or
the mixer stage (type D).
QUICK REFERENCE DATA
Drain-source voltage V
Drain current (DC or average) I
Total power dissipation
up to T
=75°CP
amb
Drain current
V
= 10 V; VGS=0
DS
Transfer admittance
V
= 10 V; VGS= 0; f = 1 kHz yfs min. 2.5 4 6 7 mS
DS
Feedback capacitance
VDS= 10 V; VGS=0 C
V
= 10 V; ID= 5 mA C
DS
Noise figure at optimum source admittance
G
= 1 mS; −BS= 3 mS; f = 100 MHz
S
V
= 10 V; VGS= 0 F typ. 1.5 1.5 −−dB
DS
V
= 10 V; ID= 5 mA F typ. −− 1.5 1.5 dB
DS
1
2
3
g
MAM257
Fig.1 Simplified outline and symbol
DS
D
tot
max. 20 V
max. 30 mA
max. 300 mW
BF410A B C D
I
DSS
rs
rs
min. 0.7 2.5 6 10 mA
max. 3.0 7.0 12 18 mA
typ. 0.5 0.5 −−pF
typ. −− 0.5 0.5 pF
d
s
December 1990 2
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