Philips BF370 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF370
NPN medium frequency transistor
Product specification Supersedes data of 1997 Jul 11
1999 Apr 21
Philips Semiconductors Product specification
NPN medium frequency transistor BF370
FEATURES
Low current (max. 100 mA)
Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 emitter 2 base
APPLICATIONS
3 collector
IF pre-amplifiers of television receivers.
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
handbook, halfpage
1
2
3
plastic package.
MAM370
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V V I I P T T T
CBO CEO
EBO C CM
tot
stg
j
amb
collector-base voltage open emitter 40 V collector-emitter voltage open base 15 V emitter-base voltage open collector 4.5 V collector current (DC) 100 mA peak collector current 200 mA total power dissipation T
25 °C; note 1 500 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 21 2
Philips Semiconductors Product specification
NPN medium frequency transistor BF370
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
C
c
C
e
C
re
f
T
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=20V −−400 nA
I
= 0; VCB=20V; Tj= 125 °C −−30 µA
E
emitter cut-off current IC= 0; VEB=2V −−100 nA DC current gain IC= 10 mA; VCE=1V 40 −− collector capacitance IE=ie= 0; VCB=10V; f=1MHz 2.2 pF emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz −−4.5 pF feedback capacitance IC= 0; VCB= 10 V; f = 1 MHz 1.6 pF transition frequency VCE= 10 V; f = 100 MHz
I
= 10 mA 500 −−MHz
C
I
= 40 mA 490 −−MHz
C
1999 Apr 21 3
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