Philips BF324 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF324
PNP medium frequency transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 07
Philips Semiconductors Product specification
PNP medium frequency transistor BF324
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• RF stages in FM front-ends in common base
configuration.
handbook, halfpage
DESCRIPTION
1
2
3
3
2
PNP medium frequency transistor in a TO-92; SOT54
plastic package.
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−−30 V
collector-emitter voltage open base −−−30 V
peak collector current −−−25 mA
total power dissipation T
≤ 25 °C −−300 mW
amb
DC current gain IC= −4 mA; VCE= −10 V 25 −−
transition frequency IC= −4 mA; VCE= −10 V; f = 100 MHz − 450 − MHz
1997 Jul 07 2
Philips Semiconductors Product specification
PNP medium frequency transistor BF324
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter −−30 V
collector-emitter voltage open base −−30 V
emitter-base voltage open collector −−4V
collector current (DC) −−25 mA
peak collector current −−25 mA
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 420 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
rb
f
T
collector cut-off current IE= 0; VCB= −30 V −−−50 nA
emitter cut-off current IC= 0; VEB= −4V −−−100 nA
DC current gain VCE= −10 V
I
= −1mA − 45 −
C
I
= −4mA 25 −−
C
base-emitter voltage IC= −4 mA; VCE= −10 V − 760 − mV
feedback capacitance IC= 0; VCE= −10 V; f = 1 MHz −−0.3 pF
transition frequency VCE= −10 V; f = 100 MHz
I
= −1mA − 350 − MHz
C
I
= −4 mA 400 450 − MHz
C
= −8mA − 440 − MHz
I
C
1997 Jul 07 3
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