Philips BF247C, BF247B, BF246C, BF246B, BF246A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors
FEATURES
• Interchangeability of drain and source connections
• High I
• Frequency up to 450 MHz.
APPLICATIONS
• VHF and UHF amplifiers
• Mixers
• General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
DSS
range
CAUTION
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
PINNING
PIN SYMBOL DESCRIPTION
BF246A; BF246B; BF246C
1 d drain
2 g gate
3 s source
BF247A; BF247B; BF247C
1 d drain
2 s source
3 g gate
handbook, halfpage
1
2
3
MAM257
Fig.1 Simplified outline (TO-92 variant)
and symbol.
g
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
V
I
DSS
DS
GSoff
drain-source voltage −−±25 V
gate-source cut-off voltage ID= 10 nA; VDS=15V −0.6 −−14.5 V
drain current VDS= 15 V; VGS=0
BF246A; BF247A 30 − 80 mA
BF246B; BF247B 60 − 140 mA
BF246C; BF247C 110 − 250 mA
P
tot
y
forward transfer admittance ID= 10 mA; VDS=15V;
fs
total power dissipation up to T
=50°C −−400 mW
amb
8 −−mS
f=1kHz
C
rs
reverse transfer capacitance ID= 10 mA; VDS=15V;
− 3.5 − pF
f=1MHz
T
j
operating junction temperature −−150 °C
1996 Jul 29 2
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