Philips BF240 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF240
NPN medium frequency transistor
Product specification
Supersedes data of 1998 Dec 02
1999 Apr 21
Philips Semiconductors Product specification
NPN medium frequency transistor BF240
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 40 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• AM mixers
• IF amplifiers in AM/FM receivers.
handbook, halfpage
DESCRIPTION
1
2
3
1
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
MAM258
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 4V
collector current (DC) − 25 mA
peak collector current − 25 mA
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
3
2
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 21 2
Philips Semiconductors Product specification
NPN medium frequency transistor BF240
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
thermal resistance from junction to ambient note 1 420 K/W
collector cut-off current IE= 0; VCB=20V −−100 nA
I
= 0; VCB=20V; T
E
= 150 °C −−4µA
amb
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 1 mA; VCE=10V 67 − 220
base-emitter voltage IC= 1 mA; VCE= 10 V 675 725 775 mV
feedback capacitance IC= 0; VCB=10V; f=1MHz −−0.5 pF
transition frequency IC= 1 mA; VCE= 10 V; f = 100 MHz 150 −−MHz
1999 Apr 21 3
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