Philips BF199 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BF199
NPN medium frequency transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 07
Philips Semiconductors Product specification
NPN medium frequency transistor BF199
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 25 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• Output stage of a vision IF amplifier.
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
handbook, halfpage
1
2
3
MAM258
3
1
2
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−25 V
peak collector current −−25 mA
total power dissipation T
≤ 25 °C −−500 mW
amb
DC current gain IC= 7 mA; VCE=10V 38 −−
transition frequency IC= 5 mA; VCE= 10 V; f = 100 MHz − 550 − MHz
1997 Jul 07 2
Philips Semiconductors Product specification
NPN medium frequency transistor BF199
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 4V
collector current (DC) − 25 mA
peak collector current − 25 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
collector cut-off current IE= 0; VCB=40V −−100 nA
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 7 mA; VCE=10V 38 −−
base-emitter voltage IC= 7 mA; VCE=10V − 775 925 mV
feedback capacitance IC= 0; VCB=10V; f=1MHz −−0.5 pF
transition frequency IC= 5 mA; VCE= 10 V; f = 100 MHz − 550 − MHz
1997 Jul 07 3
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