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DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D087
BDP31
NPN medium power transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 23
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Philips Semiconductors Product specification
NPN medium power transistor BDP31
FEATURES
• High current (max. 3 A)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2,4 collector
APPLICATIONS
3 emitter
• General purpose medium power applications.
DESCRIPTION
handbook, halfpage
4
2, 4
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BDP32.
123
Top view
1
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 6V
collector current (DC) − 3A
peak collector current − 6A
peak base current − 0.5 A
total power dissipation Tmb≤ 25 °C; note 1 − 1.35 W
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for the SOT223 in the General Part of associated
1999 Apr 23 2
2
.
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Philips Semiconductors Product specification
NPN medium power transistor BDP31
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
thermal resistance from junction to ambient note 1 91 K/W
thermal resistance from junction to soldering point 10 K/W
“Thermal considerations for the SOT223 in the General Part of associated
.
collector cut-off current IE= 0; VCB=50V; − 50 nA
= 0; VCB=50V; Tj= 150 °C − 10 µA
I
E
emitter cut-off current IC= 0; VEB=5V; − 50 nA
DC current gain IC= 0.5 A; VCE= 12 V; note 1; see Fig.2 40 −
I
= 2 A; VCE= 1 V; note 1; see Fig.2 20 −
C
collector-emitter saturation
voltage
IC= 500 mA; IB= 50 mA; note 1 − 300 mV
I
= 2 A; IB= 200 mA; note 1 − 700 mV
C
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 − 1.2 V
I
= 2 A; IB= 200 mA; note 1 − 1.5 V
C
transition frequency IC= 250 mA; VCE= 5 V; f = 100 MHz 60 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤ 0.02.
p
1999 Apr 23 3