Philips BDL32 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D087
BDL32
PNP BISS-transistor
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 29
Philips Semiconductors Product specification
PNP BISS-transistor BDL32
FEATURES
• High current (max. 5 A)
PINNING
PIN DESCRIPTION
• Low voltage (max. 10 V)
• Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
• Battery powered units where high current and low power
consumption are important.
handbook, halfpage
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. NPN complement: BDL31.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 not connected
3 emitter
4 collector
4
123
Top view
4
1
3
MAM373
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−10 V
emitter-base voltage open collector −−5V
collector current (DC) −−5A
peak collector current −−10 A
peak base current −−1A
total power dissipation T
≤ 25 °C; note 1 − 1.35 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
Handbook”
.
“Thermal considerations for SOT223 in the General Part of associated
2
.
1999 Apr 29 2
Philips Semiconductors Product specification
PNP BISS-transistor BDL32
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note 1 92 K/W
thermal resistance from junction to soldering point 10 K/W
“Thermal considerations for SOT223 in the General Part of associated
.
collector cut-off current IE= 0; VCB= −10 V −−50 nA
= 0; VCB= −10 V; Tj= 150 °C −−50 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −2 V; note 1
I
= −0.5 A 200 −
C
I
= −1 A 180 −
C
I
= −3 A 120 −
C
I
= −5A 50 −
C
V
= −1 V; IC= −2 A; note 1 120 −
CE
collector-emitter saturation voltage note 1
I
= −1 A; IB= −20 mA −−250 mV
C
I
= −2 A; IB= −200 mA −−400 mV
C
= −3 A; IB= −60 mA −−600 mV
I
C
I
= −5 A; IB= −100 mA −−1V
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 150 pF
transition frequency IC= −500 mA; VCE= −10 V;
100 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 29 3
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