Philips BCP52, BCP51 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D087
BCP51; BCP52; BCP53
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 08
1999 Apr 08
Philips Semiconductors Product specification
PNP medium power transistors BCP51; BCP52; BCP53
FEATURES
PINNING
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Medium power (max. 1.3 W).
APPLICATIONS
• Audio, telephony and automotive applications
• Thick and thin-film circuits.
handbook, halfpage
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
4
2, 4
1
123
Top view
MAM288
3
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BCP51 −−45 V
BCP52 −−60 V
BCP53 −−100 V
V
CEO
collector-emitter voltage open base
BCP51 −−45 V
BCP52 −−60 V
BCP53 −−80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−1.5 A
peak base current −−0.2 A
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
2
Handbook”.
.
1999 Apr 08 2
Philips Semiconductors Product specification
PNP medium power transistors BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
Handbook”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BE
f
T
thermal resistance from junction to ambient note 1 95 K/W
thermal resistance from junction to soldering point 14 K/W
“Thermal considerations for SOT223 in the General Part of associated
collector cut-off current IE= 0; VCB= −30 V −−−100 nA
= 0; VCB= −30 V; Tj= 125 °C −−−10 µA
I
E
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain VCE= −2 V; see Fig.2
I
= −5mA 40 −−
C
I
=−150 mA 63 − 250
C
I
= −500 mA 25 −−
C
DC current gain IC= 150 mA; VCE= −2 V; see Fig.2
BCP53-10 63 − 160
BCP51-16; BCP52-16; BCP53-16 100 − 250
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−−0.5 V
base-emitter voltage IC= −500 mA; VCE= −2V −−−1V
transition frequency IC= −10 mA; VCE= −5V;
− 115 − MHz
f = 100 MHz
1999 Apr 08 3
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