Philips BCF32 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BCF32
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 20
1999 Apr 22
Philips Semiconductors Product specification
NPN general purpose transistor BCF32
FEATURES
• Low current (max. 100 mA)
PINNING
PIN DESCRIPTION
• Low voltage (max. 32 V).
APPLICATIONS
• Low level, low noise general purpose applications in
thick and thin-film circuits.
DESCRIPTION
handbook, halfpage
NPN transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER MARKING CODE
(1)
BCF32 D7∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1 base
2 emitter
3 collector
Top view
3
1
21
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 32 V
collector-emitter voltage open base − 32 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN general purpose transistor BCF32
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=32V −−100 nA
I
= 0; VCB=32V; Tj= 100 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC=10µA; VCE=5V − 150 −
I
= 2 mA; VCE= 5 V 200 − 450
C
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA − 120 250 mV
I
= 50 mA; IB= 2.5 mA − 210 − mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 750 − mV
I
= 50 mA; IB= 2.5 mA − 850 − mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 550 − 700 mV
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
− 1.2 4 dB
f = 1 kHz; B = 200 Hz
1999 Apr 22 3
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