Philips BC638, BC636 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC636; BC638; BC640
PNP medium power transistors
Product specification
Supersedes data of 1997 Mar 07
1999 Apr 23
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
handbook, halfpage
1
2
3
2
1
package. NP complements: BC635, BC637 and BC639.
MAM285
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC636 −−45 V
BC638 −−60 V
BC640 −−100 V
V
CEO
collector-emitter voltage open base
BC636 −−45 V
BC638 −−60 V
BC640 −−80 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−1.5 A
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 0.83 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
thermal resistance from junction to ambient note 1 150 K/W
collector cut-off current IE= 0; VCB= −30 V −−100 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−10 µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain VCE= −2 V; see Fig.2
I
= −5mA 40 −
C
=−150 mA 63 250
I
C
I
= −500 mA 25 −
C
DC current gain I
= −150 mA; VCE= −2 V; see Fig.2
C
BC636-10 63 160
BC636-16; BC638-16; BC640-16 100 250
collector-emitter saturation voltage IC= −500 mA; IB= −50 mA −−0.5 V
base-emitter voltage IC= −500 mA; VCE= −2V −−1V
transition frequency IC= −50 mA; VCE= −5 V; f = 100 MHz 100 − MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.6
C
complementary pairs
1999 Apr 23 3
Loading...