Philips BC639-16, BC639, BC637-16, BC635-16, BC635-10 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Mar 12
1999 Apr 23
DISCRETE SEMICONDUCTORS
BC635; BC637; BC639
NPN medium power transistors
ook, halfpage
M3D186
1999 Apr 23 2
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages of audio/video amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM259
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC635 − 45 V
BC637 − 60 V
BC639 − 100 V
V
CEO
collector-emitter voltage open base
BC635 − 45 V
BC637 − 60 V
BC639 − 80 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 1A
I
CM
peak collector current − 1.5 A
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB=30V − 100 nA
I
E
= 0; VCB=30V; Tj= 150 °C − 10 µA
I
EBO
emitter cut-off current IC= 0; VEB=5V − 100 nA
h
FE
DC current gain VCE= 2 V; see Fig.2
I
C
= 5 mA 40 −
I
C
= 150 mA 63 250
I
C
= 500 mA 25 −
DC current gain I
C
= 150 mA; VCE= 2 V; see Fig.2
BC639-10 63 160
BC635-16; BC637-16; BC639-16 100 250
V
CEsat
collector-emitter saturation voltage IC= 500 mA; IB=50mA − 500 mV
V
BE
base-emitter voltage IC= 500 mA; VCE=2V − 1V
f
T
transition frequency IC= 50 mA; VCE= 5 V; f = 100 MHz 100 − MHz
DC current gain ratio of the
complementary pairs
I
C
= 150 mA; VCE =2V − 1.6
h
FE1
h
FE2
-----------
Loading...