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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BC517
NPN Darlington transistor
Product specification
Supersedes data of 1997 Apr 23
1999 Apr 23
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Philips Semiconductors Product specification
NPN Darlington transistor BC517
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• Very high DC current gain (min. 30000).
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector
APPLICATIONS
• Where very high amplification is required.
23
TR1
TR2
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
handbook, halfpage
1
2
3
package. PNP complement: BC516.
1
MAM302
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
B
tot
stg
j
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage VBE=0 − 30 V
emitter-base voltage open collector − 10 V
collector current (DC) − 500 mA
peak collector current − 800 mA
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 2
![](/html/c0/c082/c08216603138a398410029835080127534d8b3e559eb26a94adec203668ef202/bg3.png)
Philips Semiconductors Product specification
NPN Darlington transistor BC517
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB=30V −−100 nA
emitter cut-off current IC= 0; VEB=10V −−100 nA
DC current gain IC= 20 mA; VCE= 2 V; see Fig.2 30000 −−
collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1V
base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
base-emitter on-state voltage IC= 10 mA; VCE=5V −−1.4 V
transition frequency IC= 30 mA; VCE=5V;
− 220 − MHz
f = 100 MHz
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
−1
10
VCE=2V.
1
10 10
Fig.2 DC current gain; typical values.
MGD837
2
IC (mA)
3
10
1999 Apr 23 3