![](/html/26/26eb/26eba21b971cabfbd08b320c02d98e63349a6db6939ad78e4116d8804be00cd7/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D088
BBY42
VHF variable capacitance diode
Product specification
Supersedes data of November 1993
1996 May 03
![](/html/26/26eb/26eba21b971cabfbd08b320c02d98e63349a6db6939ad78e4116d8804be00cd7/bg2.png)
Philips Semiconductors Product specification
VHF variable capacitance diode BBY42
FEATURES
• Excellent linearity
• Small plastic SMD package
• C28: 2.7 pF; ratio: 14.
handbook, halfpage
21
APPLICATIONS
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
2
n.c.
1
3
• VCO.
3
MAM170
DESCRIPTION
The BBY42 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOT23 small plastic SMD package.
Marking code: S13.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
reverse current VR= 28 V; see Fig.3 −−
V
= 28 V; Tj=85°C; see Fig.3 −−
R
10
200
diode series resistance f =100 MHz; note 1 −−1Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 31 −−
= 3 V; f = 1 MHz; see Figs 2 and 4 − 24 −
V
R
V
= 28 V; f = 1 MHz; see Figs 2 and 4 2.4 − 3
R
capacitance ratio f = 1 MHz 12 − 16
nA
nA
pF
pF
pF
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2