Philips BB910 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D051
BB910
VHF variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diode BB910
FEATURES
• Excellent linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.5; ratio: 16
• Low series resistance.
Cathode side indicated by a red band on a black body.
Additional green band.
handbook, halfpage
k
a
MAM234
APPLICATIONS
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• VCO.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BB910 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−200 nA
V
R
10
nA
diode series resistance f = 100 MHz; note 1 −−1Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
= 28 V; f = 1 MHz; see Figs 2 and 4 2.3 − 2.7 pF
R
38
−−
pF
capacitance ratio f = 1 MHz 14 −−
C
∆
----------
C
d
d
capacitance matching VR= 0.5 to 28 V −−2.5 %
Note
is the value at which Cd= 40 pF.
1. V
R
1996 May 03 2
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