DISCRETE SEMICONDUCTORS
DATA SH EET
M3D051
BB909A; BB909B
VHF variable capacitance diodes
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
VHF variable capacitance diodes BB909A; BB909B
FEATURES
• Excellent linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.9 pF; ratio: 13.5
• Low series resistance.
Cathode side indicated by a green band on a black body (BB909A and BB909B).
Additional red band (BB909A only).
handbook, halfpage
k
a
MAM234
APPLICATIONS
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• VCO.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BB909A, BB909B are variable
capacitance diodes, fabricated in
planar technology, and encapsulated
in hermetically sealed leaded glass
SOD68 (DO-34) packages.
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−200 nA
V
R
10
diode series resistance f = 100 MHz; note 1 −−0.9 Ω
diode capacitance see Figs 2 and 4
BB909A V
BB909B V
= 1 V; f = 1 MHz
R
V
= 3 V; f = 1 MHz − 23 −
R
V
= 28 V; f = 1 MHz 2.6 − 3pF
R
= 1 V; f = 1 MHz
R
= 3 V; f = 1 MHz − 25 −
V
R
V
= 28 V; f = 1 MHz 2.8 − 3.2 pF
R
31
33.5
−−
−−
capacitance ratio f = 1 MHz 12 − 15
nA
pF
pF
pF
pF
C
∆
---------C
d
d
capacitance matching VR= 1 to 28 V −−2.5 %
Note
1. V
is the value at which Cd= 30 pF.
R
1996 May 03 2