Philips BB809 Datasheet
DATA SH EET
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
DISCRETE SEMICONDUCTORS
BB809
VHF variable capacitance diode
lfpage
M3D050
1996 May 03 2
Philips Semiconductors Product specification
VHF variable capacitance diode BB809
FEATURES
• High linearity
• Matched to 3%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 4.7 pF; ratio: 9
• Low series resistance.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band A up to 160 MHz
• VCO.
DESCRIPTION
The BB809 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
continuous reverse voltage
−
30 V
I
F
continuous forward current −
20 mA
T
stg
storage temperature
−55
+150 °C
T
j
operating junction temperature
−55
+100 °C
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM159
k
a
Cathode side indicated by a yellow band on a black body.
ELECTRICAL CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
Note
1. V
R
is the value at which Cd= 25 pF.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
reverse current VR= 28 V; see Fig.3 −−
10
nA
V
R
= 28 V; Tj=85°C; see Fig.3 −−200 nA
r
s
diode series resistance f = 200 MHz; note 1 −−0.6 Ω
C
d
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
39
− 46
pF
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4 4 − 5pF
capacitance ratio f = 1 MHz 8 − 10
capacitance matching V
R
= 0.5 to 28 V −−3%
C
d1V()
C
d28V()
--------------------
C
d
∆
C
d
----------
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