Philips BB804, BB804W, BB804R, BB804G Datasheet

DATA SH EET

Product specification
Supersedes data of 1996 May 03

1998 Nov 25

DISCRETE SEMICONDUCTORS

BB804

VHF variable capacitance double
diode

fpage

M3D088

1998 Nov 25 2

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

FEATURES

• Selected capacitance range

• Small plastic SMD package

• C8: 26 pF; ratio: 1.7

• Low series resistance.

APPLICATIONS

• Electronic tuning in FM radio
applications.

DESCRIPTION

The BB804 is a variable capacitance
double diode with a common cathode,
fabricated in planar technology, and
encapsulated in the SOT23 small
plastic SMD package.

MARKING

TYPE NUMBER CODE

BB804 SF5
BB804W SF2

PINNING

PIN DESCRIPTION

1 anode (a

1

)

2 anode (a

2

)

3 common cathode

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

21

3

MAM169

21

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

Per diode

V

R

continuous reverse voltage

−

18 V

I

F

continuous forward current −

50 mA

T

stg

storage temperature

−55

+150 °C

T

j

operating junction temperature

−55

+125 °C

1998 Nov 25 3

Philips Semiconductors Product specification

VHF variable capacitance double diode BB804

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

Note

1. V

R

is the value at which Cd= 38 pF.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode

I

R

reverse current VR= 16 V; see Fig.3 −−

20

nA

V

R

= 16 V; Tj=60°C; see Fig.3 −−

200

nA

r

s

diode series resistance f = 100 MHz; note 1 − 0.2 −Ω

C

d

diode capacitance VR= 2 V; f = 1 MHz; see Figs 2 and 4

42

−

46.5 pF

V

R

= 2 V; f = 1 MHz; white 2; see Figs 2 and 4

44

−

45.5 pF

capacitance ratio f = 1 MHz 1.65 − 1.75

C

d2V()

C

d8V()

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