Philips BB417 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
fpage
M3D050
BB417
UHF variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
UHF variable capacitance diode BB417
FEATURES
• Excellent linearity
handbook, halfpage
k
a
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C15: 3 pF; ratio: 3.5.
APPLICATIONS
Cathode side indicated by a white band on a black body.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
MAM159
• Automatic frequency control
• VCO.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
DESCRIPTION
The BB417 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d4V()
-------------------C
d15V()
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−200 nA
V
R
10
diode series resistance f = 470 MHz; note 1 −−0.75 Ω
diode capacitance VR= 4 V; f = 1 MHz; see Figs 2 and 4
V
= 15 V; f = 1 MHz; see Figs 2 and 4 2.2 − 4pF
R
8
− 11
capacitance ratio f = 1 MHz 2 − 5
nA
pF
Note
1. V
is the value at which Cd= 9 pF.
R
1996 May 03 2
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