Philips BB215 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D155
BB215
UHF variable capacitance diode
Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
UHF variable capacitance diode BB215

FEATURES

Excellent linearity
Matched to 3%
Small hermetically sealed glass
SMD package
C28: 2 pF; ratio: 8.3
Low series resistance.

APPLICATIONS

Electronic tuning in UHF television tuners
VCO.

DESCRIPTION

The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package.

ELECTRICAL CHARACTERISTICS

T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Cathode side indicated by a white band. Second green band for type identification.
ka
MAM186 - 1
Fig.1 Simplified outline (SOD80) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage continuous forward current
storage temperature operating junction temperature
55
55
30 V 20 mA +150 °C +100 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------­C
d28V()
C
d
---------­C
d
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−
V
R
10 200
nA nA
diode series resistance f = 470 MHz; note 1 −−0.75 diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 16.5 18
V
= 28 V; f = 1 MHz; see Figs 2 and 4 1.8 2.2 pF
R
pF
capacitance ratio f = 1 MHz 7.6 8.3
capacitance matching VR= 0.5 to 28 V −−3%
Note
is the value at which Cd= 9 pF.
1. V
R
1996 May 03 2
Loading...
+ 2 hidden pages