DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D155
BB215
UHF variable capacitance diode
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
UHF variable capacitance diode BB215
FEATURES
• Excellent linearity
• Matched to 3%
• Small hermetically sealed glass
SMD package
• C28: 2 pF; ratio: 8.3
• Low series resistance.
APPLICATIONS
• Electronic tuning in UHF television
tuners
• VCO.
DESCRIPTION
The BB215 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD80 glass SMD package.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Cathode side indicated by a white band.
Second green band for type identification.
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MAM186 - 1
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
C
∆
d
---------C
d
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−
V
R
10
200
nA
nA
diode series resistance f = 470 MHz; note 1 −−0.75 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 − 16.5 18
V
= 28 V; f = 1 MHz; see Figs 2 and 4 1.8 − 2.2 pF
R
pF
capacitance ratio f = 1 MHz 7.6 8.3 −
capacitance matching VR= 0.5 to 28 V −−3%
Note
is the value at which Cd= 9 pF.
1. V
R
1996 May 03 2