![](/html/75/758c/758c354cb0c12cbea15ecedc15aaf3117d3f3bc6c6b2fc4990d0c3e1fb02a5db/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D155
BB215
UHF variable capacitance diode
Product specification
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
1996 May 03
![](/html/75/758c/758c354cb0c12cbea15ecedc15aaf3117d3f3bc6c6b2fc4990d0c3e1fb02a5db/bg2.png)
Philips Semiconductors Product specification
UHF variable capacitance diode BB215
FEATURES
• Excellent linearity
• Matched to 3%
• Small hermetically sealed glass
SMD package
• C28: 2 pF; ratio: 8.3
• Low series resistance.
APPLICATIONS
• Electronic tuning in UHF television
tuners
• VCO.
DESCRIPTION
The BB215 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD80 glass SMD package.
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
handbook, 4 columns
Cathode side indicated by a white band.
Second green band for type identification.
ka
MAM186 - 1
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+100 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
-------------------C
d28V()
C
∆
d
---------C
d
reverse current VR= 28 V; see Fig.3 −−
= 28 V; Tj=85°C; see Fig.3 −−
V
R
10
200
nA
nA
diode series resistance f = 470 MHz; note 1 −−0.75 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 − 16.5 18
V
= 28 V; f = 1 MHz; see Figs 2 and 4 1.8 − 2.2 pF
R
pF
capacitance ratio f = 1 MHz 7.6 8.3 −
capacitance matching VR= 0.5 to 28 V −−3%
Note
is the value at which Cd= 9 pF.
1. V
R
1996 May 03 2