Philips BB181 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BB181
VHF variable capacitance diode
Product specification
1998 Nov 26
Philips Semiconductors Product specification
VHF variable capacitance diode BB181
FEATURES
• Excellent linearity
• Ultra small plastic SMD package
• C28: 1 pF; ratio: 14.
APPLICATIONS
• Electronic tuning in satellite tuners
• Tuneable coupling
• Voltage controlled oscillators
(VCO).
DESCRIPTION
The BB181 is a variable capacitance
diode, fabricated in planar technology
handbook, 2 columns
12
N
and encapsulated in the SOD523
(SC-79) ultra small plastic SMD
MBK441
package.
Marking code: N.
PINNING
Orientation of marking code as shown.
Cathode side indicated by a bar.
PIN DESCRIPTION
1 cathode
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
2 anode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
30 V
20 mA
+150 °C
+150 °C
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
R
r
s
C
d
C
d 0.5V()
--------------------- C
d28V()
reverse current VR= 30 V; see Fig.3 −
V
=30V; Tj=85°C; see Fig.3 −
R
10
200
diode series resistance f = 470 MHz; note 1 − 3 Ω
diode capacitance VR= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 0.7 1.055 pF
V
R
817pF
capacitance ratio f = 1 MHz 12 16
nA
nA
Note
1. V
is the value at which Cd= 9 pF.
R
1998 Nov 26 2
Philips Semiconductors Product specification
VHF variable capacitance diode BB181
GRAPHICAL DATA
15
handbook, full pagewidth
C
d
(pF)
10
5
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBE872
2
10
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
1000
10
Tj= 0to 85 °C.
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1998 Nov 26 3
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