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DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BB179
UHF variable capacitance diode
Product specification
1997 Nov 13
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Philips Semiconductors Product specification
UHF variable capacitance diode BB179
FEATURES
• Excellent linearity
• Excellent matching to 2% DMA
• Ultra small plastic SMD package
• C28: 2.1 pF; ratio: 9
• Low series resistance.
APPLICATIONS
• Electronic tuning in UHF television
tuners
• Voltage controlled oscillators
DESCRIPTION
The BB179 is a planar technology
variable capacitance diode, in a
SOD523 (SC-79) package. The
excellent matching performance is
achieved by gliding matching and a
direct matching assembly procedure.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, 2 columns
12
9
MBK441
Marking code: 9.
Orientation of marking code as shown.
Cathode side indicated by a bar.
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
(VCO).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage
peak reverse voltage in series with a 10 kΩ resistor
continuous forward current −
storage temperature
operating junction temperature
−
−
−55
−55
30 V
35 V
20 mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
diode series resistance f = 470 MHz;
− 0.6 0.75 Ω
10
200
nA
nA
VR is the value at which Cd=9pF
C
d
C
d1V()
-----------------C
d2V()
C
d1V()
-------------------C
d28V()
C
d25V()
-------------------C
d28V()
C
∆
d
---------C
d
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 1.951 − 2.225 pF
V
R
18.22
−
21.26 pF
capacitance ratio f = 1 MHz − 1.27 −
capacitance ratio f = 1 MHz 8.45 − 10.9
capacitance ratio f = 1 MHz − 1.05 −
capacitance matching V
= 1 to 28 V; in a sequence of 15
R
−−2%
diodes (gliding)
1997 Nov 13 2
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Philips Semiconductors Product specification
UHF variable capacitance diode BB179
GRAPHICAL DATA
24
handbook, full pagewidth
C
d
(pF)
20
16
12
8
4
0
−1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBK440
2
10
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
o
T ( C)
j
Fig.3 Reverse current as a function of junction
temperature; maximum values.
MLC816
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
1000
10
Tj= 0 to 85°C.
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1997 Nov 13 3