Philips bb178 DATASHEETS

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D319
BB178
VHF variable capacitance diode
Product specification
1997 Nov 13
VHF variable capacitance diode BB178

FEATURES

Excellent linearity
Excellent matching to 2% DMA
Ultra small plastic SMD package
C28: 2.6 pF; ratio: 15
Very low series resistance.

APPLICATIONS

Electronic tuning in VHF television tuners, band B up to 460 MHz
Voltage controlled oscillators

DESCRIPTION

The BB178 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure.

PINNING

PIN DESCRIPTION
1 cathode 2 anode
handbook, 2 columns
12
8
MBK441
Marking code: 8. Orientation of marking code as shown. Cathode side indicated by a bar.
Fig.1 Simplified outline
(SOD523; SC-79) and symbol.
(VCO).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
V
RM
I
F
T
stg
T
j
continuous reverse voltage peak reverse voltage in series with a 10 k resistor continuous forward current storage temperature operating junction temperature
55
55
32 V 35 V 20 mA +150 °C +125 °C

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
reverse current VR= 30 V; see Fig.3 −−
V
= 30 V; Tj=85°C; see Fig.3 −−
R
diode series resistance f = 100 MHz;
0.65 0.8
10 200
nA nA
VR is the value at which Cd=30pF
C
d
C
d1V()
-----------------­C
d2V()
C
d1V()
-------------------­C
d28V()
C
d25V()
-------------------­C
d28V()
C
d
---------­C
d
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4 2.361 2.754 pF
V
R
34.65
42.35 pF
capacitance ratio f = 1 MHz 1.3
capacitance ratio f = 1 MHz 13.5 −−
capacitance ratio f = 1 MHz 1.08
capacitance matching V
= 1 to 28 V; in a sequence of 15
R
−−2%
diodes (gliding)
1997 Nov 13 2
VHF variable capacitance diode BB178

GRAPHICAL DATA

50
handbook, full pagewidth
C
d
(pF)
40
30
20
10
0
1
f =1 MHz; Tj=25°C.
10110
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBK438
2
10
o
T ( C)
j
MLC816
3
10
handbook, halfpage
I
R
(nA)
2
10
10
50
Fig.3 Reverse current as a function of junction
temperature; maximum values.
V (V)
R
MLC815
2
3
10
handbook, halfpage
TC
d
(K−1)
4
10
5
10
1
1000
10
Tj= 0 to 85°C.
11010
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse voltage; typical values.
1997 Nov 13 3
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