Philips bb112 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
lfpage
M3D053
BB112
AM variable capacitance diode
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03
Philips Semiconductors Product specification
AM variable capacitance diode BB112
FEATURES
• Matched to 3%
• Leaded plastic package
• C8.5: 23 pF; ratio: 21.
handbook, halfpage
k
a
MAM222
APPLICATIONS
• Electronic tuning in AM radio
Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
applications
• VCO.
LIMITING VALUES
DESCRIPTION
The BB112 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD69 (TO-92 variant) leaded plastic
package.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current −
storage temperature
operating junction temperature
−
−55
−55
12 V
50 mA
+125 °C
+85 °C
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
r
s
C
d
C
d1V()
--------------------- C
d 8.5V()
∆
C
d
---------C
d
reverse current VR= 12 V; see Fig.3 −−
= 12 V; Tj=85°C; see Fig.3 −−
V
R
50
300
diode series resistance f = 500 kHz; note 1 −−1.5 Ω
diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4
= 8.5 V; f = 1 MHz; see Figs 2 and 4
V
R
440
17 − 29 pF
−
540 pF
capacitance ratio f = 1 MHz − 18 −
capacitance matching V
= 1 to 9 V; note 2 −−3%
R
nA
nA
Notes
1. V
= 1 V.
R
2. For a set of 3 diodes.
1996 May 03 2
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