Philips BAY80 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BAY80

General purpose diode

Product specification
Supersedes data of April 1996

1996 Sep 18

Philips Semiconductors Product specification

General purpose diode BAY80

FEATURES

• Hermetically sealed leaded glass
SOD27 (DO-35) package

• High switching speed: max. 50 ns

DESCRIPTION

The BAY80 is a switching diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.

• General application

• Continuous reverse voltage:

max. 120 V

• Repetitive peak reverse voltage:
max. 150 V

• Repetitive peak forward current:
max. 625 mA.

handbook, halfpage

k

APPLICATIONS

• Switching and general purposes in
industrial equipment e.g.

The diode is type branded.

oscilloscopes, digital voltmeters
and video output stages in colour

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

television.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

a

MAM246

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 150 V
continuous reverse voltage − 120 V
continuous forward current see Fig.2; note 1 − 250 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t=1s − 1A

P

tot

T

stg

T

j

total power dissipation T

=25°C; note 1 − 400 mW

amb

storage temperature −65 +175 °C
junction temperature − 175 °C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 18 2