Philips BAV45 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D153
BAV45
Picoampere diode
Product specification
Supersedes data of July 1986
1996 Mar 13
Philips Semiconductors Product specification
Picoampere diode BAV45
FEATURES
• Extremely low leakage current:
max. 5 pA
• Low diode capacitance
• Light insensitive.
APPLICATION
• Clamping
• Holding
• Peak follower
• Time delay circuits
• Logarithmic amplifiers
• Protection of insulated gate
field-effect transistors.
DESCRIPTION
Silicon diode in a metal TO-18 can. It has an extremely low leakage current over
a wide temperature range combined with a low capacitance and is not sensitive
to light.
a
k
MAM207
Fig.1 Simplified outline (SOT18/15; TO-18 except for the two leads)
and symbol.
CAUTION
Handle the device with care whilst soldering into the circuit. The extremely
low leakage current can only be guaranteed when the bottom is free from
solder flux or other contaminations.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage − 35 V
continuous reverse voltage − 20 V
continuous forward current see Fig.2 − 50 mA
repetitive peak forward current − 100 mA
total power dissipation T
=25°C; note 1 − 200 mW
amb
storage temperature −65 +125 °C
junction temperature − 125 °C
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 2
Loading...