Philips BAV23S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAV23S
General purpose double diode
Product specification
Supersedes data of 1998 Jan 08
1999 May 05
Philips Semiconductors Product specification
General purpose double diode BAV23S
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
DESCRIPTION
The BAV23S consists of two general
purpose diodes connected in series
fabricated in planar technology, and
encapsulated in the small SOT23
plastic SMD package.
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
• Repetitive peak forward current:
handbook, halfpage
21
max. 625 mA.
APPLICATIONS
• General purpose where high
breakdown voltages are required.
Marking code: L31.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PINNING
3
PIN DESCRIPTION
1 anode
2 cathode
3 common connection
12
3
MAM232
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
repetitive peak reverse
− 250 V
voltage
V
RRM
repetitive peak reverse
series connection − 500 V
voltage
V
R
V
R
I
F
continuous reverse voltage − 200 V
continuous reverse voltage series connection − 400 V
continuous forward current single diode loaded; note 1; see Fig.2 − 225 mA
double diode loaded; note 1; see Fig.2 − 125 mA
I
FRM
I
FSM
repetitive peak forward current − 625 mA
non-repetitive peak forward
current
square wave; Tj=25°C prior to surge;
see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05 2
Philips Semiconductors Product specification
General purpose double diode BAV23S
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
V
F
I
R
I
R
C
d
t
rr
forward voltage see Fig.3
= 100 mA 1.0 V
I
F
I
= 200 mA 1.25 V
F
forward voltage series connection; see Fig.3
I
= 100 mA 2.0 V
F
I
= 200 mA 2.5 V
F
reverse current see Fig.5
= 200 V 100 nA
V
R
V
= 200 V; Tj= 150 °C 100 mA
R
reverse current series connection
V
= 400 V 100 nA
R
= 400 V; Tj= 150 °C 100 mA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 5 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured
at IR= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 05 3
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