Philips BAV23 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D070

BAV23

General purpose double diode

Product specification
Supersedes data of April 1996

1996 Sep 17

Philips Semiconductors Product specification

General purpose double diode BAV23

FEATURES

• Small plastic SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 200 V

• Repetitive peak reverse voltage:
max. 250 V

• Repetitive peak forward current:
max. 625 mA.

APPLICATIONS

• General purpose where high
breakdown voltages are required.

DESCRIPTION

The BAV23 consists of two general
purpose diodes fabricated in planar
technology, and encapsulated in the
small plastic SMD SOT143 package.
The diodes are not connected.

handbook, halfpage

Top view

Marking code: L30.

43

21

PINNING

PIN DESCRIPTION

MAM059

1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)

4

3

1

2

Fig.1 Simplified outline (SOT143) and symbol.

1996 Sep 17 2

Philips Semiconductors Product specification

General purpose double diode BAV23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V
I

F

I

FRM

I

FSM

P
T
T

RRM
RRM
R
R

tot
stg
j

repetitive peak reverse voltage − 250 V
repetitive peak reverse voltage series connection 500 V
continuous reverse voltage − 200 V
continuous reverse voltage series connection − 400 V
continuous forward current single diode loaded; see Fig.2;

− 225 mA

note 1
double diode loaded; see Fig.2;

− 125 mA

note 1
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A

total power dissipation T

=25°C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17 3